Thermal Coupling

The performance of high-tech circuitry such as processors and power devices also largely depends on the thermal level. Semiconductor devices loss their ability of fast switching if the temperature increases to much. Furthermore after a critical temperature is reached the device will be destroyed. Therefore monitoring temperature and regulating cooling are important issues.
In our research, we set up simulation models for semiconductor equations and integrated circuits, which incorporate transient temperature changes in the device and heat conduction between devices. That is an electric network as well as semiconductor equations have to be equipped with an appropriate model for power transfer and heat conduction.
Since this multiphysical problem of coupled electric networks and heat conduction exhibits widely separated time scales, not only the model but also the numerical algorithms need be design to enable fast simulations. Multirate cosimulation is an good choice if the coupling is appropriately set up. Please see also: (Coupled DAEs).
Publications
- 1995
607.
Jensen, Per; Brumm, Martin; Kraemer, Wolfgang P.; Bunker, Philip R.
A Treatment of the Renner Effect Using the MORBID Hamiltonian
Journal of Molecular Spectroscopy, 171 (1) :31-57
1995
Herausgeber: Academic Press606.
Jensen, Per; Brumm, Martin; Kraemer, Wolfgang P.; Bunker, Philip R.
An ab Initio Calculation of the Rovibronic Energies of the CH\(_{2}\)\(^{+}\) Molecule
Journal of Molecular Spectroscopy, 172 (1) :194-204
1995
Herausgeber: Academic Press605.
Jensen, Per; Brumm, Martin; Kraemer, Wolfgang P.; Bunker, Philip R.
An ab Initio Calculation of the Rovibronic Energies of the CH\(_{2}\)\(^{+}\) Molecule
Journal of Molecular Spectroscopy, 172 (1) :194-204
1995
Herausgeber: Academic Press604.
Jensen, Per; Brumm, Martin; Kraemer, Wolfgang P.; Bunker, Philip R.
An ab Initio Calculation of the Rovibronic Energies of the CH2+ Molecule
Journal of Molecular Spectroscopy, 172 (1) :194-204
1995
Herausgeber: Academic Press603.
Gerstberger, R.; Günther, M.
Charge-oriented extrapolation methods in digital circuit simulation
Applied Numerical Mathematics, 18 (1) :115–125
1995
Herausgeber: Elsevier602.
Gerstberger, Robert; Günther, Michael
Charge-oriented extrapolation methods in digital circuit simulation
Applied numerical mathematics, 18 (1-3) :115--125
1995
Herausgeber: North-Holland601.
Flaud, Jean-Marie; Camy-Peyret, C.; B{ü}rger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the \(\nu\)\(_{1}\)/\(\nu\)\(_{3}\) vibrational states of H\(_{2}\)\(^{80}\)Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press600.
Flaud, Jean-Marie; Camy-Peyret, C.; B{ü}rger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the \(\nu\)\(_{1}\)/\(\nu\)\(_{3}\) vibrational states of H\(_{2}\)\(^{80}\)Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press599.
Flaud, Jean-Marie; Camy-Peyret, C.; Bürger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the ν1/ν3 vibrational states of H280Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press598.
Heilmann, Margareta
Explicit Voronovskaja-type results for linear combinations of BDT-operators
Approximation Theory and its Applications, 11 (1) :54-61
1995597.
Ehrhardt, M.
Finite Differenzenverfahren für hyperbolische Systeme mit absorbierenden Randbedingungen
Technische Universität Berlin
1995596.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H\(_{2}\)Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995595.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H\(_{2}\)Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995594.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H2Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995593.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press592.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press591.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press590.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press589.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press588.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X2 2Π1/2 → X1 2Π3/2 Fine-Structure Transitions of 130TeF and 130Te35Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press587.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
Preprint (1745)
1995
Herausgeber: Technische Hochschule Darmstadt586.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
1995585.
Günther, Michael; Denk, Georg; Feldmann, Uwe
Impact of modeling and integration scheme on simulation of MOS-circuits
In Breitenecker, F. and Husinsky, I., Editor, Eurosim'95 Simulation Congress. Proceedings of the 1995 EUROSIM Conference, EUROSIM '95, Seite 385–390
In Breitenecker, F. and Husinsky, I., Editor
Herausgeber: Elsevier
1995584.
G\"unther, Michael; Denk, G.; Feldmann, U.
Impact of modeling and integration scheme on simulation of MOS-circuits
In F.~Breitenecker and I.~Husinsky., Editor, Eurosim'95 Simulation Congress, Seite 385--390
In F.~Breitenecker and I.~Husinsky., Editor
Herausgeber: Amsterdam, Elsevier
1995583.
Jacob, Birgit; Drăgan, Vasile; Pritchard, Anthony J.
Infinite-dimensional time-varying systems with nonlinear output feedback
Integral Equations Operator Theory, 22 (4) :440--462
1995