Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1996

668.

Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Emission of nitrous oxide and methane from aero engines: Monitoring by tunable diode laser spectroscopy
Infrared Physics and Technology, 37 (1) :75-81
1996
Herausgeber: Pergamon

667.

Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Emission of nitrous oxide and methane from aero engines: Monitoring by tunable diode laser spectroscopy
Infrared Physics and Technology, 37 (1) :75-81
1996
Herausgeber: Pergamon

666.

Hamacher, Horst W.; Klamroth, Kathrin; Nickel, Stefan
EWGLA 8 Proceedings
Band 10 aus Special Issue of Studies in Locational Analysis
1996

665.

Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c\verb=~= \(^{1}\)A\(_{1}\) state of methylene, CH\(_{2}\)
Journal of Physical Chemistry, 100 (46) :18088-18092
1996

664.

Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c\verb=~= \(^{1}\)A\(_{1}\) state of methylene, CH\(_{2}\)
Journal of Physical Chemistry, 100 (46) :18088-18092
1996

663.

Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c~ 1A1 state of methylene, CH2
Journal of Physical Chemistry, 100 (46) :18088-18092
1996

662.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X\(_{2}\)1 → X\(_{1}\)0\(^{+}\) Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press

661.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X\(_{2}\)1 → X\(_{1}\)0\(^{+}\) Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press

660.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X21 → X10+ Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press

659.

Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N\(_{2}\) [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996

658.

Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N\(_{2}\) [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996

657.

Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N2 [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996

656.

G\"unther, Michael; Denk, G.; Feldmann, U.
Modeling and simulating charge sensitive {MOS} circuits
Math. Modelling of Systems, 2 :69--81
1996

655.

Günther, Michael; Denk, Georg; Feldmann, Uwe
Modeling and simulating charge sensitive MOS circuits
Mathematical Modelling of Systems, 2 (1) :69–81
1996
Herausgeber: Taylor & Francis

654.

Denk, G; Feldmann, U
Modelling and simulating charge sensitive MOS circuits
Mathematical Modelling of Systems, 2 (1) :69--81
1996
Herausgeber: Taylor \& Francis

653.

Günther, Michael; Hoschek, Markus
Modified ROW methods for electric circuit simulation packages
Preprint (1864)
1996
Herausgeber: Technische Hochschule Darmstadt

652.

Günther, Michael
Numerical solution of differential-algebraic equations in electric circuit simulation
In Neunzert, Helmut, Editor
Seite 285–294
Herausgeber: Vieweg+ Teubner
1996
285–294

651.

Günther, Michael
Numerical solution of differential-algebraic equations in electric circuit simulation
Progress in Industrial Mathematics at ECMI 94 :285--294
1996
Herausgeber: Vieweg+ Teubner Verlag

650.

Denk, Georg; Günther, Michael; Simeon, Bernd
Numerische simulation in chip-design und fahrzeugtechnik
Preprint (1841)
1996
Herausgeber: Technische Hochschule Darmstadt

649.

GrÄb, Robert; Günther, Michael; Wever, Utz; Zheng, Qinghua
Optimization of parallel multilevel-Newton algorithms on workstation clusters
In Bougé, Luc and Fraigniaud, Pierre and Mignotte, Anne and Robert, Yves, Editor, Euro-Par96 Parallel ProcessingBand1124ausLecture Notes in Computer Science, Seite 91–96
In Bougé, Luc and Fraigniaud, Pierre and Mignotte, Anne and Robert, Yves, Editor
Herausgeber: Springer Berlin Heidelberg
1996

648.

GrÄb, Robert; Günther, Michael; Wever, Utz; Zheng, Qinghua
Optimization of parallel multilevel-Newton algorithms on workstation clusters
In L. Bouge and et al., Editor, Euro-Par'96 Parallel Processing: Second International Euro-Par Conference Lyon, France, August 26--29, 1996 Proceedings, Volume II 2Band1124ausLecture Notes in Computer Science, Seite 91--96
Springer Berlin Heidelberg
In L. Bouge and et al., Editor
Herausgeber: Berlin, Springer-Verlag
1996

647.

Klamroth, Kathrin; Mengersen, Ingrid
Ramsey numbers of K_3 versus (p,q)-graphs
Ars Combinatoria, 43 :107-120
1996

646.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996

645.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996

644.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996