Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1996
668.
Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Emission of nitrous oxide and methane from aero engines: Monitoring by tunable diode laser spectroscopy
Infrared Physics and Technology, 37 (1) :75-81
1996
Herausgeber: Pergamon667.
Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Emission of nitrous oxide and methane from aero engines: Monitoring by tunable diode laser spectroscopy
Infrared Physics and Technology, 37 (1) :75-81
1996
Herausgeber: Pergamon666.
Hamacher, Horst W.; Klamroth, Kathrin; Nickel, Stefan
EWGLA 8 Proceedings
Band 10 aus Special Issue of Studies in Locational Analysis
1996665.
Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c\verb=~= \(^{1}\)A\(_{1}\) state of methylene, CH\(_{2}\)
Journal of Physical Chemistry, 100 (46) :18088-18092
1996664.
Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c\verb=~= \(^{1}\)A\(_{1}\) state of methylene, CH\(_{2}\)
Journal of Physical Chemistry, 100 (46) :18088-18092
1996663.
Bunker, Philip R.; Jensen, Per; Yamaguchi, Yukio; Schaefer, Henry F.
High-level ab initio calculation of the rotation-vibration energies in the c~ 1A1 state of methylene, CH2
Journal of Physical Chemistry, 100 (46) :18088-18092
1996662.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X\(_{2}\)1 → X\(_{1}\)0\(^{+}\) Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press661.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X\(_{2}\)1 → X\(_{1}\)0\(^{+}\) Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press660.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Towle, J. P.; Brown, John M.
High-Resolution Study of the X21 → X10+ Fine-Structure Transition of BiF
Journal of Molecular Spectroscopy, 178 (2) :143-156
1996
Herausgeber: Academic Press659.
Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N\(_{2}\) [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996658.
Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N\(_{2}\) [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996657.
Becker, Karl Heinz; Geiger, Harald; Wiesen, Peter
Kinetics of the reaction CH + N2 [M]→ Products in the range 10-620 torr and 298-1059 K
International Journal of Chemical Kinetics, 28 (2) :115-123
1996656.
G\"unther, Michael; Denk, G.; Feldmann, U.
Modeling and simulating charge sensitive {MOS} circuits
Math. Modelling of Systems, 2 :69--81
1996655.
Günther, Michael; Denk, Georg; Feldmann, Uwe
Modeling and simulating charge sensitive MOS circuits
Mathematical Modelling of Systems, 2 (1) :69–81
1996
Herausgeber: Taylor & Francis654.
Denk, G; Feldmann, U
Modelling and simulating charge sensitive MOS circuits
Mathematical Modelling of Systems, 2 (1) :69--81
1996
Herausgeber: Taylor \& Francis653.
Günther, Michael; Hoschek, Markus
Modified ROW methods for electric circuit simulation packages
Preprint (1864)
1996
Herausgeber: Technische Hochschule Darmstadt652.
Günther, Michael
Numerical solution of differential-algebraic equations in electric circuit simulation
In Neunzert, Helmut, Editor
Seite 285–294
Herausgeber: Vieweg+ Teubner
1996
285–294651.
Günther, Michael
Numerical solution of differential-algebraic equations in electric circuit simulation
Progress in Industrial Mathematics at ECMI 94 :285--294
1996
Herausgeber: Vieweg+ Teubner Verlag650.
Denk, Georg; Günther, Michael; Simeon, Bernd
Numerische simulation in chip-design und fahrzeugtechnik
Preprint (1841)
1996
Herausgeber: Technische Hochschule Darmstadt649.
GrÄb, Robert; Günther, Michael; Wever, Utz; Zheng, Qinghua
Optimization of parallel multilevel-Newton algorithms on workstation clusters
In Bougé, Luc and Fraigniaud, Pierre and Mignotte, Anne and Robert, Yves, Editor, Euro-Par96 Parallel ProcessingBand1124ausLecture Notes in Computer Science, Seite 91–96
In Bougé, Luc and Fraigniaud, Pierre and Mignotte, Anne and Robert, Yves, Editor
Herausgeber: Springer Berlin Heidelberg
1996648.
GrÄb, Robert; Günther, Michael; Wever, Utz; Zheng, Qinghua
Optimization of parallel multilevel-Newton algorithms on workstation clusters
In L. Bouge and et al., Editor, Euro-Par'96 Parallel Processing: Second International Euro-Par Conference Lyon, France, August 26--29, 1996 Proceedings, Volume II 2Band1124ausLecture Notes in Computer Science, Seite 91--96
Springer Berlin Heidelberg
In L. Bouge and et al., Editor
Herausgeber: Berlin, Springer-Verlag
1996647.
Klamroth, Kathrin; Mengersen, Ingrid
Ramsey numbers of K_3 versus (p,q)-graphs
Ars Combinatoria, 43 :107-120
1996646.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996645.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996644.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter
Solubility of nitrous acid (HONO) in sulfuric acid solutions
Journal of Physical Chemistry, 100 (36) :14984-14990
1996