Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1983
72.
Jensen, Per; Bunker, Philip R.
The application of the nonrigid bender Hamiltonian to a quasilinear molecule
Journal of Molecular Spectroscopy, 99 (2) :348-356
198371.
Winnewisser, Brenda P.; Jensen, Per
The infrared spectrum of fulminic acid, HCNO, in the \(\nu\)\(_{4}\) fundamental region
Journal of Molecular Spectroscopy, 101 (2) :408-421
198370.
Winnewisser, Brenda P.; Jensen, Per
The infrared spectrum of fulminic acid, HCNO, in the \(\nu\)\(_{4}\) fundamental region
Journal of Molecular Spectroscopy, 101 (2) :408-421
198369.
Winnewisser, Brenda P.; Jensen, Per
The infrared spectrum of fulminic acid, HCNO, in the ν4 fundamental region
Journal of Molecular Spectroscopy, 101 (2) :408-421
198368.
Jensen, Per
The nonrigid bender Hamiltonian for calculating the rotation-vibration energy levels of a triatomic molecule
Computer Physics Reports, 1 (1) :1-55
198367.
Jensen, Per
The nonrigid bender Hamiltonian for calculating the rotation-vibration energy levels of a triatomic molecule
Computer Physics Reports, 1 (1) :1-55
198366.
Jensen, Per
The nonrigid bender Hamiltonian for calculating the rotation-vibration energy levels of a triatomic molecule
Computer Physics Reports, 1 (1) :1-55
198365.
Holstein, K. J.; Fink, Ewald H.; Zabel, Friedhelm
The ν3 vibration of electronically excited HO2(A2A')
Journal of Molecular Spectroscopy, 99 (1) :231-234
1983- 1982
64.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules b0\(_{g}\)\(^{+}\) → X\(^{2}\)1\(_{g}\) emissions of Se\(_{2}\) and Te\(_{2}\)
Chemical Physics Letters, 86 (2) :118-122
198263.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules b0\(_{g}\)\(^{+}\) → X\(^{2}\)1\(_{g}\) emissions of Se\(_{2}\) and Te\(_{2}\)
Chemical Physics Letters, 86 (2) :118-122
198262.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeO and TeS
Journal of Molecular Structure, 80 :75-82
198261.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeO and TeS
Journal of Molecular Structure, 80 :75-82
198260.
Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)0\(^{+}\) emissions of SbBr
Chemical Physics Letters, 93 (5) :475-479
198259.
Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)0\(^{+}\) emissions of SbBr
Chemical Physics Letters, 93 (5) :475-479
198258.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ and a1Δ emissions from group VI-VI diatomic molecules b0g+ → X21g emissions of Se2 and Te2
Chemical Physics Letters, 86 (2) :118-122
198257.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ and a1Δ emissions from group VI-VI diatomic molecules: b0+ → X10+, X21 emissions of TeO and TeS
Journal of Molecular Structure, 80 :75-82
198256.
Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ emissions from group V-VII diatomic molecules: b0+ → X10+, X20+ emissions of SbBr
Chemical Physics Letters, 93 (5) :475-479
198255.
Tausch, Michael W.
Modelle im Chemieunterricht
Der mathematische und naturwissenschaftliche Unterricht (MNU), 35 :226
198254.
Becker, Karl Heinz; Horie, O.; Schmidt, V. H.; Wiesen, Peter
Spectroscopic identification of C\(_{2}\)O radicals in the C\(_{3}\)O\(_{2}\) + O flame system by laser-induced fluorescence
Chemical Physics Letters, 90 (1) :64-68
198253.
Becker, Karl Heinz; Horie, O.; Schmidt, V. H.; Wiesen, Peter
Spectroscopic identification of C\(_{2}\)O radicals in the C\(_{3}\)O\(_{2}\) + O flame system by laser-induced fluorescence
Chemical Physics Letters, 90 (1) :64-68
198252.
Becker, Karl Heinz; Horie, O.; Schmidt, V. H.; Wiesen, Peter
Spectroscopic identification of C2O radicals in the C3O2 + O flame system by laser-induced fluorescence
Chemical Physics Letters, 90 (1) :64-68
198251.
Jensen, Per; Brodersen, Svend
The \(\nu\)\(_{5}\) Raman band of CH\(_{3}\)CD\(_{3}\)
Journal of Raman Spectroscopy, 12 (3) :295-299
198250.
Jensen, Per; Brodersen, Svend
The \(\nu\)\(_{5}\) Raman band of CH\(_{3}\)CD\(_{3}\)
Journal of Raman Spectroscopy, 12 (3) :295-299
198249.
Jensen, Per; Bunker, Philip R.; Hoy, A. R.
The equilibrium geometry, potential function, and rotation?vibration energies of CH\(_{2}\) in the X\verb=~=\(^{3}\)B\(_{1}\) ground state
The Journal of Chemical Physics, 77 (11) :5370-5374
198248.
Jensen, Per; Bunker, Philip R.; Hoy, A. R.
The equilibrium geometry, potential function, and rotation?vibration energies of CH\(_{2}\) in the X\verb=~=\(^{3}\)B\(_{1}\) ground state
The Journal of Chemical Physics, 77 (11) :5370-5374
1982