Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1986
167.
Kraemer, Wolfgang P.; Roos, B. O.; Bunker, Philip R.; Jensen, Per
An ab initio calculation of the rotation-vibration energies of the state of CCH using the nonrigid bender Hamiltonian
Journal of Molecular Spectroscopy, 120 (1) :236-238
1986166.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.; Vervloet, M.
An electric quadrupole transition: the emission system of oxygen
Canadian Journal of Physics, 64 (3) :242-245
1986
Herausgeber: NRC Research Press Ottawa, Canada165.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.; Vervloet, M.
An electric quadrupole transition: the emission system of oxygen
Canadian Journal of Physics, 64 (3) :242-245
1986
Herausgeber: NRC Research Press Ottawa, Canada164.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.; Vervloet, M.
An electric quadrupole transition: the emission system of oxygen
Canadian Journal of Physics, 64 (3) :242-245
1986
Herausgeber: NRC Research Press Ottawa, Canada163.
Jensen, Per; Winnewisser, Manfred
Prediction of higher inversion energy levels for isocyanamide H\(_{2}\)NNC
Collection of Czechoslovak Chemical Communications, 51 (7) :1373-1381
1986
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.162.
Jensen, Per; Winnewisser, Manfred
Prediction of higher inversion energy levels for isocyanamide H\(_{2}\)NNC
Collection of Czechoslovak Chemical Communications, 51 (7) :1373-1381
1986
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.161.
Jensen, Per; Winnewisser, Manfred
Prediction of higher inversion energy levels for isocyanamide H2NNC
Collection of Czechoslovak Chemical Communications, 51 (7) :1373-1381
1986
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.160.
Bielefeld, M.; Wildt, J{ü}rgen; Fink, Ewald H.
Rate constants of the near-resonant E-E energy exchange processes SeS(b0\(^{+}\)) + O\(_{2}\)(X\(^{3}\)\(\Sigma\)\(_{g}\)\(^{-}\)) ↔ SeS(X\(_{1}\)0\(^{+}\)) + O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))
Chemical Physics Letters, 126 (5) :421-426
1986159.
Bielefeld, M.; Wildt, J{ü}rgen; Fink, Ewald H.
Rate constants of the near-resonant E-E energy exchange processes SeS(b0\(^{+}\)) + O\(_{2}\)(X\(^{3}\)\(\Sigma\)\(_{g}\)\(^{-}\)) ↔ SeS(X\(_{1}\)0\(^{+}\)) + O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))
Chemical Physics Letters, 126 (5) :421-426
1986158.
Bielefeld, M.; Wildt, Jürgen; Fink, Ewald H.
Rate constants of the near-resonant E-E energy exchange processes SeS(b0+) + O2(X3Σg-) ↔ SeS(X10+) + O2(a1Δg)
Chemical Physics Letters, 126 (5) :421-426
1986157.
Beardsworth, R.; Bunker, Philip R.; Jensen, Per; Kraemer, Wolfgang P.
Rotation-vibration energy levels of H\(_{2}\)O and C\(_{3}\) calculated using the nonrigid bender Hamiltonian
Journal of Molecular Spectroscopy, 118 (1) :50-63
1986156.
Beardsworth, R.; Bunker, Philip R.; Jensen, Per; Kraemer, Wolfgang P.
Rotation-vibration energy levels of H\(_{2}\)O and C\(_{3}\) calculated using the nonrigid bender Hamiltonian
Journal of Molecular Spectroscopy, 118 (1) :50-63
1986155.
Beardsworth, R.; Bunker, Philip R.; Jensen, Per; Kraemer, Wolfgang P.
Rotation-vibration energy levels of H2O and C3 calculated using the nonrigid bender Hamiltonian
Journal of Molecular Spectroscopy, 118 (1) :50-63
1986154.
Tausch, Michael W.
Silberfreie Photographie und Photochromie
Praxis der Naturwissenschaften (Chemie), 35 :19
1986153.
Maten, E. J. W.
Splitting methods for fourth order parabolic partial differential equations
Computing, 37 (4) :335--350
Dezember 1986
Herausgeber: Springer Science and Business Media {LLC}152.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.
The high-resolution emission spectrum of S\(_{2}\) in the near infrared: The b\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) - X\(^{3}\)\(\Sigma\)\(_{g}\)\(^{-}\) system
Journal of Molecular Spectroscopy, 119 (2) :377-387
1986151.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.
The high-resolution emission spectrum of S\(_{2}\) in the near infrared: The b\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) - X\(^{3}\)\(\Sigma\)\(_{g}\)\(^{-}\) system
Journal of Molecular Spectroscopy, 119 (2) :377-387
1986150.
Fink, Ewald H.; Kruse, H.; Ramsay, D. A.
The high-resolution emission spectrum of S2 in the near infrared: The b1Σg+ - X3Σg- system
Journal of Molecular Spectroscopy, 119 (2) :377-387
1986149.
Jensen, Per; Johns, John W. C.
The infrared spectrum of carbon suboxide in the \(\nu\)\(_{6}\) fundamental region: Experimental observation and semirigid bender analysis
Journal of Molecular Spectroscopy, 118 (1) :248-266
1986148.
Jensen, Per; Johns, John W. C.
The infrared spectrum of carbon suboxide in the \(\nu\)\(_{6}\) fundamental region: Experimental observation and semirigid bender analysis
Journal of Molecular Spectroscopy, 118 (1) :248-266
1986147.
Jensen, Per; Johns, John W. C.
The infrared spectrum of carbon suboxide in the ν6 fundamental region: Experimental observation and semirigid bender analysis
Journal of Molecular Spectroscopy, 118 (1) :248-266
1986146.
Jensen, Per; Bunker, Philip R.
The nonrigid bender Hamiltonian using an alternative perturbation technique
Journal of Molecular Spectroscopy, 118 (1) :18-39
1986145.
Jensen, Per; Bunker, Philip R.
The nonrigid bender Hamiltonian using an alternative perturbation technique
Journal of Molecular Spectroscopy, 118 (1) :18-39
1986144.
Jensen, Per; Bunker, Philip R.
The nonrigid bender Hamiltonian using an alternative perturbation technique
Journal of Molecular Spectroscopy, 118 (1) :18-39
1986143.
Bunker, Philip R.; Jensen, Per; Kraemer, Wolfgang P.; Beardsworth, R.
The potential surface of X\verb=~=\(^{3}\)B\(_{1}\) methylene (CH\(_{2}\)) and the singlet-triplet splitting
The Journal of Chemical Physics, 85 (7) :3724-3731
1986