Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1995

592.

Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press

591.

Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press

590.

Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press

589.

Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press

588.

Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X2 2Π1/2 → X1 2Π3/2 Fine-Structure Transitions of 130TeF and 130Te35Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press

587.

Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
Preprint (1745)
1995
Herausgeber: Technische Hochschule Darmstadt

586.

Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
1995

585.

Günther, Michael; Denk, Georg; Feldmann, Uwe
Impact of modeling and integration scheme on simulation of MOS-circuits
In Breitenecker, F. and Husinsky, I., Editor, Eurosim'95 Simulation Congress. Proceedings of the 1995 EUROSIM Conference, EUROSIM '95, Seite 385–390
In Breitenecker, F. and Husinsky, I., Editor
Herausgeber: Elsevier
1995

584.

G\"unther, Michael; Denk, G.; Feldmann, U.
Impact of modeling and integration scheme on simulation of MOS-circuits
In F.~Breitenecker and I.~Husinsky., Editor, Eurosim'95 Simulation Congress, Seite 385--390
In F.~Breitenecker and I.~Husinsky., Editor
Herausgeber: Amsterdam, Elsevier
1995

583.

Jacob, Birgit; Drăgan, Vasile; Pritchard, Anthony J.
Infinite-dimensional time-varying systems with nonlinear output feedback
Integral Equations Operator Theory, 22 (4) :440--462
1995

582.

Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995

581.

Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995

580.

Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C2H4 reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995

579.

G\"unther, Michael
Ladungsorientierte {Rosenbrock}-{Wanner}-Methoden zur numerischen Simulation digitaler Schaltungen
Band 20(168) aus Fortschritt-Berichte VDI
Herausgeber: VDI-Verlag D\"usseldorf
1995

578.

Günther, M.
Ladungsorientierte Rosenbrock-Wanner-Methoden zur numerischen Simulation digitaler Schaltungen
1995

577.

Günther, Michael
Ladungsorientierte Rosenbrock-Wanner-Methoden zur numerischen Simulation digitaler Schaltungen
1995

576.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm\(^{-1}\) by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley \& Sons, Ltd

575.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm\(^{-1}\) by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley \& Sons, Ltd

574.

Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm-1 by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley & Sons, Ltd

573.

Jacob, Birgit
Linear quadratic optimal control of time-varying systems with indefinite costs on Hilbert spaces: the finite horizon problem
J. Math. Systems Estim. Control, 5 (1) :28
1995

572.

Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO\(_{2}\) in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995

571.

Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO\(_{2}\) in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995

570.

Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO2 in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995

569.

Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Mechanistic study of the heterogeneous conversion of NO\(_{2}\) into HONO and N\(_{2}\)O on acid surfaces
Faraday Discussions, 100 (2) :121-127
1995

568.

Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Mechanistic study of the heterogeneous conversion of NO\(_{2}\) into HONO and N\(_{2}\)O on acid surfaces
Faraday Discussions, 100 (2) :121-127
1995