Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1995
592.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press591.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press590.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press589.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press588.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X2 2Π1/2 → X1 2Π3/2 Fine-Structure Transitions of 130TeF and 130Te35Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press587.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
Preprint (1745)
1995
Herausgeber: Technische Hochschule Darmstadt586.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
1995585.
Günther, Michael; Denk, Georg; Feldmann, Uwe
Impact of modeling and integration scheme on simulation of MOS-circuits
In Breitenecker, F. and Husinsky, I., Editor, Eurosim'95 Simulation Congress. Proceedings of the 1995 EUROSIM Conference, EUROSIM '95, Seite 385–390
In Breitenecker, F. and Husinsky, I., Editor
Herausgeber: Elsevier
1995584.
G\"unther, Michael; Denk, G.; Feldmann, U.
Impact of modeling and integration scheme on simulation of MOS-circuits
In F.~Breitenecker and I.~Husinsky., Editor, Eurosim'95 Simulation Congress, Seite 385--390
In F.~Breitenecker and I.~Husinsky., Editor
Herausgeber: Amsterdam, Elsevier
1995583.
Jacob, Birgit; Drăgan, Vasile; Pritchard, Anthony J.
Infinite-dimensional time-varying systems with nonlinear output feedback
Integral Equations Operator Theory, 22 (4) :440--462
1995582.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995581.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995580.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C2H4 reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995579.
G\"unther, Michael
Ladungsorientierte {Rosenbrock}-{Wanner}-Methoden zur numerischen Simulation digitaler Schaltungen
Band 20(168) aus Fortschritt-Berichte VDI
Herausgeber: VDI-Verlag D\"usseldorf
1995578.
Günther, M.
Ladungsorientierte Rosenbrock-Wanner-Methoden zur numerischen Simulation digitaler Schaltungen
1995577.
Günther, Michael
Ladungsorientierte Rosenbrock-Wanner-Methoden zur numerischen Simulation digitaler Schaltungen
1995576.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm\(^{-1}\) by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley \& Sons, Ltd575.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm\(^{-1}\) by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley \& Sons, Ltd574.
Becker, Karl Heinz; Kleffmann, Jörg; Kurtenbach, Ralf; Wiesen, Peter; Febo, Antonio; Gherardi, M.; Sparapani, R.
Line strength measurements of trans-HONO near 1255 cm-1 by tunable diode laser spectrometry
Geophysical Research Letters, 22 (18) :2485-2488
1995
Herausgeber: John Wiley & Sons, Ltd573.
Jacob, Birgit
Linear quadratic optimal control of time-varying systems with indefinite costs on Hilbert spaces: the finite horizon problem
J. Math. Systems Estim. Control, 5 (1) :28
1995572.
Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO\(_{2}\) in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995571.
Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO\(_{2}\) in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995570.
Benter, Thorsten; Liesner, M.; Sauerland, V.; Schindler, Ralph N.
Mass spectrometric in-situ determination of NO2 in gas mixtures by resonance enhanced multiphoton ionisation
Fresenius' Journal of Analytical Chemistry, 351 (6) :489-492
1995569.
Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Mechanistic study of the heterogeneous conversion of NO\(_{2}\) into HONO and N\(_{2}\)O on acid surfaces
Faraday Discussions, 100 (2) :121-127
1995568.
Wiesen, Peter; Kleffmann, Jörg; Kurtenbach, Ralf; Becker, Karl Heinz
Mechanistic study of the heterogeneous conversion of NO\(_{2}\) into HONO and N\(_{2}\)O on acid surfaces
Faraday Discussions, 100 (2) :121-127
1995