Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1994
492.
Auwera, J. Vander; Holland, J. K.; Jensen, Per; Johns, John W. C.
The \(\nu\)\(_{6}\) band system of C\(_{3}\)O\(_{2}\) near 540 cm\(^{-1}\)
Journal of Molecular Spectroscopy, 163 (2) :529-540
1994
Herausgeber: Academic Press491.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press490.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press489.
Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\) (a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) Transition of Bi\(_{2}\)
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press488.
Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\) (a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) Transition of Bi\(_{2}\)
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press487.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\)(a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) transition of Sb\(_{2}\)
Chemical Physics Letters, 218 (1-2) :13-16
1994486.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\)(a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) transition of Sb\(_{2}\)
Chemical Physics Letters, 218 (1-2) :13-16
1994485.
Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a 3Σu+ (a1 1u) → X 1Σg+ (X 0g+) Transition of Bi2
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press484.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a 3Σu+(a1 1u) → X 1Σg+ (X 0g+) transition of Sb2
Chemical Physics Letters, 218 (1-2) :13-16
1994483.
Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press482.
Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994481.
Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994480.
Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994479.
Tashkun, Sergey A.; Jensen, Per
The low-energy part of the potential function for the electronic ground state of NO\(_{2}\) derived from experiment
Journal of Molecular Spectroscopy, 165 (1) :173-184
1994
Herausgeber: Academic Press478.
Tashkun, Sergey A.; Jensen, Per
The low-energy part of the potential function for the electronic ground state of NO\(_{2}\) derived from experiment
Journal of Molecular Spectroscopy, 165 (1) :173-184
1994
Herausgeber: Academic Press477.
Tashkun, Sergey A.; Jensen, Per
The low-energy part of the potential function for the electronic ground state of NO2 derived from experiment
Journal of Molecular Spectroscopy, 165 (1) :173-184
1994
Herausgeber: Academic Press476.
Jensen, Per; Bunker, Philip R.
The Molecular Symmetry Group for Molecules in High Angular Momentum States
Journal of Molecular Spectroscopy, 164 (1) :315-317
1994
Herausgeber: Academic Press475.
Jensen, Per; Bunker, Philip R.
The Molecular Symmetry Group for Molecules in High Angular Momentum States
Journal of Molecular Spectroscopy, 164 (1) :315-317
1994
Herausgeber: Academic Press474.
Jensen, Per; Bunker, Philip R.
The Molecular Symmetry Group for Molecules in High Angular Momentum States
Journal of Molecular Spectroscopy, 164 (1) :315-317
1994
Herausgeber: Academic Press473.
Bednarek, G.; Wayne, R.P.; Wildt, J{ü}rgen; Fink, E.H.
The yield of O\(_{2}\)(b \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\), v=0) produced by quenching of O\(_{2}\)(A \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\), v=8) by O\(_{2}\)
Chemical Physics, 185 (2) :251-261
1994472.
Bednarek, G.; Wayne, R.P.; Wildt, J{ü}rgen; Fink, E.H.
The yield of O\(_{2}\)(b \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\), v=0) produced by quenching of O\(_{2}\)(A \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\), v=8) by O\(_{2}\)
Chemical Physics, 185 (2) :251-261
1994471.
Bednarek, G.; Wayne, R.P.; Wildt, Jürgen; Fink, E.H.
The yield of O2(b 1Σg+, v=0) produced by quenching of O2(A 3Σu+, v=8) by O2
Chemical Physics, 185 (2) :251-261
1994470.
Auwera, J. Vander; Holland, J. K.; Jensen, Per; Johns, John W. C.
The ν6 band system of C3O2 near 540 cm-1
Journal of Molecular Spectroscopy, 163 (2) :529-540
1994
Herausgeber: Academic Press- 1993
469.
Graf, J.; Jensen, Per
A Theoretical Model for the Rotation and Vibration of Symmetrical Triatomic Molecules with Strong Coupling Between the Local Stretching Modes
Journal of Molecular Spectroscopy, 159 (1) :175-191
1993
Herausgeber: Academic Press468.
Graf, J.; Jensen, Per
A Theoretical Model for the Rotation and Vibration of Symmetrical Triatomic Molecules with Strong Coupling Between the Local Stretching Modes
Journal of Molecular Spectroscopy, 159 (1) :175-191
1993
Herausgeber: Academic Press