Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1993

427.

Biggs, P.; Canosa-Mas, Carlos E.; Monks, P. S.; Wayne, Richard P.; Benter, Thorsten; Schindler, Ralph N.
The kinetics of the nitrate radical self-reaction
International Journal of Chemical Kinetics, 25 (10) :805-817
1993

426.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH\(_{3}\) and N\(_{2}\)O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993

425.

Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H2Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press

424.

Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H\(_{2}\)Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press

423.

Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H\(_{2}\)Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press

422.

Jørgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H2O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press

421.

J{\o}rgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H\(_{2}\)O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press

420.

J{\o}rgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H\(_{2}\)O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press

419.

Shestakov, Oleg; Fink, Ewald H.
The a3Σ+(a11) - X1Σ+(X0+) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993

418.

Shestakov, Oleg; Fink, Ewald H.
The a\(^{3}\)\(\Sigma\)\(^{+}\)(a\(_{1}\)1) - X\(^{1}\)\(\Sigma\)\(^{+}\)(X0\(^{+}\)) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993

417.

Shestakov, Oleg; Fink, Ewald H.
The a\(^{3}\)\(\Sigma\)\(^{+}\)(a\(_{1}\)1) - X\(^{1}\)\(\Sigma\)\(^{+}\)(X0\(^{+}\)) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993

416.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH3 and N2O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993

415.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH\(_{3}\) and N\(_{2}\)O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993

414.

Denk, G.; G\"unther, Michael; Schmidt, W.
Olympische Chips: Schaltkreise -- Spannung in der Numerik
Technische Universit\"at M\"unchen, TUM-Sonderreihe Forschung f\"ur Bayern, Heft 6: Fakult\"at f\"ur Mathematik, Fakult\"at f\"ur Informatik, Seite 14--15
1993
1992

413.

Jensen, Per; Bunker, Philip R.; Epa, V. C.; Karpfen, Alfred
An ab initio calculation of the fundamental and overtone HCl stretching vibrations for the HCl dimer
Journal of Molecular Spectroscopy, 151 (2) :384-395
1992

412.

Becker, Karl Heinz; K{ö}nig, R.; Meuser, R.; Wiesen, Peter; Bayes, Kyle D.
Kinetics of C\(_{2}\)O radicals formed in the photolysis of carbon suboxide at 308 and 248 nm
Journal of Photochemistry and Photobiology, A: Chemistry, 64 (1) :1-14
1992

411.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N2 reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

410.

Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A 2Σ+ and X2 2Π3/2 states of PbF
Chemical Physics, 165 (2-3) :415-427
1992

409.

Heilmann, Margareta
Rate of approximation of weighted derivatives by linear combinations of SMD-operators
Numerical Methods in Approximation Theory - Proceedings of the conference held in Oberwolfach Germany, November 24-30, 1991, Seite 97-115
In D. Braess et al., Editor
Herausgeber: Birkhäuser, Basel, Int. Ser. Numer. Math. 105
1992

408.

Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO\(_{2}\) molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992

407.

Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO2 molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992

406.

Maten, E. J. W.; Melissen, J. B. M.
Simulation of inductive heating
{IEEE} Transactions on Magnetics, 28 (2) :1287--1290
März 1992
Herausgeber: Institute of Electrical and Electronics Engineers ({IEEE})

405.

Tausch, Michael W.; Wachtendonk, M.; Deissenberger, H.; Porth, H.-R.; Weißenhorn, R.G.
STOFF-FORMEL-UMWELT, BAND 2: ORGANISCHE CHEMIE - ANGEWANDTE CHEMIE, Lehrbuch für die S II, (Grund- und Leistungskurse), 272 Seiten
Herausgeber: C. C. Buchner, Bamberg
1992

404.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

403.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

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