Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1984
117.
Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ Emissions from group V-VII diatomic molecules. b0+ → X10+, X21 band systems of AsCl and AsBr
Chemical Physics Letters, 111 (1-2) :100-104
1984116.
Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ Emissions from group V-VII diatomic molecules. b0+ → X10+, X21 emissions of AsI and SbI
Chemical Physics Letters, 104 (4) :383-388
1984115.
Jensen, Per
C\(_{3}\)O\(_{2}\) as a semirigid bender: The degenerate \(\nu\)\(_{5}\) state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984114.
Jensen, Per
C\(_{3}\)O\(_{2}\) as a semirigid bender: The degenerate \(\nu\)\(_{5}\) state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984113.
Jensen, Per
C3O2 as a semirigid bender: The degenerate ν5 state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984112.
Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH\(_{3}\)NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984111.
Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH\(_{3}\)NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984110.
Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH3NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984109.
Glöckner, W.; Tausch, Michael W.; Autorenteam
MATERIALIEN FÜR DER KURSUNTERRICHT CHEMIE, Aufgabensammlung mit Klausur- und Abituraufgaben aus allen Bereichen der Schulchemie, 3 Bände
Herausgeber: Aulis Deubner\&Co KG, Köln
1984108.
Winkler, R.
Numerische Behandlung von parameterabhängigen Zwei-Punkt-Randwertaufgaben unter Berücksichtigung von Verzweigungsproblemen
Humboldt-Universität zu Berlin
1984107.
Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))-sensitized chemiluminescence of a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) and b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984106.
Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))-sensitized chemiluminescence of a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) and b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984105.
Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, Jürgen; Winter, R.; Zabel, Friedhelm
O2(a1Δg)-sensitized chemiluminescence of a1Δ → X3Σ- and b1Σ+ → X3Σ- transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984104.
Maten, E. J. W.
Stability analysis of finite difference methods for fourth order parabolic partial differential equations
Rijksuniversiteit Utrecht
1984103.
Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH\(_{2}\)N\(_{2}\) in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984102.
Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH\(_{2}\)N\(_{2}\) in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984101.
Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH2N2 in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984- 1983
100.
Bunker, Philip R.; Jensen, Per
A refined potential surface for the X\verb=~=\(^{3}\)B\(_{1}\) electronic state of methylene CH\(_{2}\)
The Journal of Chemical Physics, 79 (3) :1224-1228
198399.
Bunker, Philip R.; Jensen, Per
A refined potential surface for the X\verb=~=\(^{3}\)B\(_{1}\) electronic state of methylene CH\(_{2}\)
The Journal of Chemical Physics, 79 (3) :1224-1228
198398.
Bunker, Philip R.; Jensen, Per
A refined potential surface for the X~3B1 electronic state of methylene CH2
The Journal of Chemical Physics, 79 (3) :1224-1228
198397.
Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
198396.
Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
198395.
Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\) emission of Pl
Chemical Physics Letters, 102 (5) :404-408
198394.
Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\) emission of Pl
Chemical Physics Letters, 102 (5) :404-408
198393.
Winter, R.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ and a1Δ emissions from group VI-VI diatomic molecules: b0+ → X10+, X21 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
1983