Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1991

367.

Becker, Eilhard; Benter, Thorsten; Kampf, R.; Schindler, Ralph N.; Wille, Uta
A Redetermination of the Rate Constant of the Reaction F + HNO\(_{3}\) → HF + NO\(_{3}\)
Berichte der Bunsengesellschaft für physikalische Chemie, 95 (10) :1168-1173
1991

366.

Becker, Eilhard; Benter, Thorsten; Kampf, R.; Schindler, Ralph N.; Wille, Uta
A Redetermination of the Rate Constant of the Reaction F + HNO\(_{3}\) → HF + NO\(_{3}\)
Berichte der Bunsengesellschaft für physikalische Chemie, 95 (10) :1168-1173
1991

365.

Becker, Eilhard; Benter, Thorsten; Kampf, R.; Schindler, Ralph N.; Wille, Uta
A Redetermination of the Rate Constant of the Reaction F + HNO3 → HF + NO3
Berichte der Bunsengesellschaft für physikalische Chemie, 95 (10) :1168-1173
1991

364.

Jensen, Per; Bunker, Philip R.; Karpfen, Alfred
An ab initio calculation of the nonadiabatic effect on the tunneling splitting in vibrationally excited (HF)\(_{2}\)
Journal of Molecular Spectroscopy, 148 (2) :385-390
1991

363.

Jensen, Per; Bunker, Philip R.; Karpfen, Alfred
An ab initio calculation of the nonadiabatic effect on the tunneling splitting in vibrationally excited (HF)\(_{2}\)
Journal of Molecular Spectroscopy, 148 (2) :385-390
1991

362.

Jensen, Per; Bunker, Philip R.; Karpfen, Alfred
An ab initio calculation of the nonadiabatic effect on the tunneling splitting in vibrationally excited (HF)2
Journal of Molecular Spectroscopy, 148 (2) :385-390
1991

361.

Jensen, Per; Marshall, Mark D.; Bunker, Philip R.; Karpfen, Alfred
An ab initio close-coupling calculation of the lower vibrational energies of the HCl dimer
Chemical Physics Letters, 180 (6) :594-600
1991

360.

Jensen, Per; Marshall, Mark D.; Bunker, Philip R.; Karpfen, Alfred
An ab initio close-coupling calculation of the lower vibrational energies of the HCl dimer
Chemical Physics Letters, 180 (6) :594-600
1991

359.

Jensen, Per; Marshall, Mark D.; Bunker, Philip R.; Karpfen, Alfred
An ab initio close-coupling calculation of the lower vibrational energies of the HCl dimer
Chemical Physics Letters, 180 (6) :594-600
1991

358.

Marshall, Mark D.; Jensen, Per; Bunker, Philip R.
An ab initio close-coupling calculation of the lower vibrational energies of the HF dimer
Chemical Physics Letters, 176 (3-4) :255-260
1991

357.

Marshall, Mark D.; Jensen, Per; Bunker, Philip R.
An ab initio close-coupling calculation of the lower vibrational energies of the HF dimer
Chemical Physics Letters, 176 (3-4) :255-260
1991

356.

Marshall, Mark D.; Jensen, Per; Bunker, Philip R.
An ab initio close-coupling calculation of the lower vibrational energies of the HF dimer
Chemical Physics Letters, 176 (3-4) :255-260
1991

355.

Karpfen, Alfred; Bunker, Philip R.; Jensen, Per
An ab initio study of the hydrogen chloride dimer: the potential energy surface and the characterization of the stationary points
Chemical Physics, 149 (3) :299-309
1991

354.

Karpfen, Alfred; Bunker, Philip R.; Jensen, Per
An ab initio study of the hydrogen chloride dimer: the potential energy surface and the characterization of the stationary points
Chemical Physics, 149 (3) :299-309
1991

353.

Karpfen, Alfred; Bunker, Philip R.; Jensen, Per
An ab initio study of the hydrogen chloride dimer: the potential energy surface and the characterization of the stationary points
Chemical Physics, 149 (3) :299-309
1991

352.

Bunker, Philip R.; Epa, V. C.; Jensen, Per; Karpfen, Alfred
An analytical ab initio potential surface and the calculated tunneling energies for the HCl dimer
Journal of Molecular Spectroscopy, 146 (1) :200-219
1991

351.

Bunker, Philip R.; Epa, V. C.; Jensen, Per; Karpfen, Alfred
An analytical ab initio potential surface and the calculated tunneling energies for the HCl dimer
Journal of Molecular Spectroscopy, 146 (1) :200-219
1991

350.

Bunker, Philip R.; Epa, V. C.; Jensen, Per; Karpfen, Alfred
An analytical ab initio potential surface and the calculated tunneling energies for the HCl dimer
Journal of Molecular Spectroscopy, 146 (1) :200-219
1991

349.

Fink, Ewald H.; Setzer, Klaus-Dieter; Wildt, J{ü}rgen; Ramsay, D. A.; Vervloet, M.
Collision-induced emission of O\(_{2}\)(b\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) → a\(^{1}\)\(\Delta\)\(_{g}\)) in the gas phase
International Journal of Quantum Chemistry, 39 (3) :287-298
1991

348.

Fink, Ewald H.; Setzer, Klaus-Dieter; Wildt, J{ü}rgen; Ramsay, D. A.; Vervloet, M.
Collision-induced emission of O\(_{2}\)(b\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) → a\(^{1}\)\(\Delta\)\(_{g}\)) in the gas phase
International Journal of Quantum Chemistry, 39 (3) :287-298
1991

347.

Fink, Ewald H.; Setzer, Klaus-Dieter; Wildt, Jürgen; Ramsay, D. A.; Vervloet, M.
Collision-induced emission of O2(b1Σg+ → a1Δg) in the gas phase
International Journal of Quantum Chemistry, 39 (3) :287-298
1991

346.

Vilesov, A. F.; Wildt, J{ü}rgen; Fink, Ewald H.
Emission of Xe: N(\(^{2}\)P) collision complexes near the N(\(^{2}\)P→\(^{2}\)D) lines
Chemical Physics, 153 (3) :531-537
1991

345.

Vilesov, A. F.; Wildt, J{ü}rgen; Fink, Ewald H.
Emission of Xe: N(\(^{2}\)P) collision complexes near the N(\(^{2}\)P→\(^{2}\)D) lines
Chemical Physics, 153 (3) :531-537
1991

344.

Vilesov, A. F.; Wildt, Jürgen; Fink, Ewald H.
Emission of Xe: N(2P) collision complexes near the N(2P→2D) lines
Chemical Physics, 153 (3) :531-537
1991

343.

Heilmann, Margareta; Müller, Manfred
Equivalence of a weighted modulus of smoothness and a modified weighted K-functional
In Nevai, P. and Pinkus, A., Editor
Herausgeber: Academic Press
1991