Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1993
468.
Graf, J.; Jensen, Per
A Theoretical Model for the Rotation and Vibration of Symmetrical Triatomic Molecules with Strong Coupling Between the Local Stretching Modes
Journal of Molecular Spectroscopy, 159 (1) :175-191
1993
Herausgeber: Academic Press467.
Graf, J.; Jensen, Per
A Theoretical Model for the Rotation and Vibration of Symmetrical Triatomic Molecules with Strong Coupling Between the Local Stretching Modes
Journal of Molecular Spectroscopy, 159 (1) :175-191
1993
Herausgeber: Academic Press466.
Cespiva, Ladislav; Bonacic-Kouteck{{\'y}}, Vlasta; Kouteck{{\'y}}, Jaroslav; Jensen, Per; Hrouda, Vojtech; C{{\'a}}rsky, Petr; Spirko, Vladim{í}r; Hobza, Pavel
Ab initio Calculations of the Rotation-Vibration Spectrum of Na\(_{3}\)\(^{+}\)
Collection of Czechoslovak Chemical Communications, 58 (1) :24-28
1993
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.465.
Cespiva, Ladislav; Bonacic-Kouteck{{\'y}}, Vlasta; Kouteck{{\'y}}, Jaroslav; Jensen, Per; Hrouda, Vojtech; C{{\'a}}rsky, Petr; Spirko, Vladim{í}r; Hobza, Pavel
Ab initio Calculations of the Rotation-Vibration Spectrum of Na\(_{3}\)\(^{+}\)
Collection of Czechoslovak Chemical Communications, 58 (1) :24-28
1993
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.464.
Cespiva, Ladislav; Bonacic-Koutecký, Vlasta; Koutecký, Jaroslav; Jensen, Per; Hrouda, Vojtech; Cársky, Petr; Spirko, Vladimír; Hobza, Pavel
Ab initio Calculations of the Rotation-Vibration Spectrum of Na3+
Collection of Czechoslovak Chemical Communications, 58 (1) :24-28
1993
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.463.
Bunker, Philip R.; Jensen, Per; Althorpe, Stuart C.; Clary, David C.
An ab initio Calculation of the Low Rotation-Vibration Energies of the CO Dimer
Journal of Molecular Spectroscopy, 157 (1) :208-219
1993
Herausgeber: Academic Press462.
Bunker, Philip R.; Jensen, Per; Althorpe, Stuart C.; Clary, David C.
An ab initio Calculation of the Low Rotation-Vibration Energies of the CO Dimer
Journal of Molecular Spectroscopy, 157 (1) :208-219
1993
Herausgeber: Academic Press461.
Bunker, Philip R.; Jensen, Per; Althorpe, Stuart C.; Clary, David C.
An ab initio Calculation of the Low Rotation-Vibration Energies of the CO Dimer
Journal of Molecular Spectroscopy, 157 (1) :208-219
1993
Herausgeber: Academic Press460.
Günther, Michael
Charge-oriented modelling of electric circuits and Rosenbrock-Wanner methods
Herausgeber: Mathematisches Institut und Institut für Informatik der Technischen~…
1993459.
Tausch, Michael W.; Wachtendonk, M.; Deissenberger, H.; Porth, H.-R.; G. Weißenhorn, R.
CHEMIE S II STOFF-FORMEL-UMWELT, Lehrbuch für Grund- und Leistungskurse, 446 Seiten
Herausgeber: C. C. Buchner, Bamberg
1993458.
Kozin, Igor N.; Jensen, Per
Fourfold Clusters of Rovibrational Energy Levels in the Fundamental Vibrational States of H\(_{2}\)Se
Journal of molecular spectroscopy, 161 (1) :186-207
1993
Herausgeber: Academic Press457.
Kozin, Igor N.; Jensen, Per
Fourfold Clusters of Rovibrational Energy Levels in the Fundamental Vibrational States of H\(_{2}\)Se
Journal of molecular spectroscopy, 161 (1) :186-207
1993
Herausgeber: Academic Press456.
Kozin, Igor N.; Jensen, Per
Fourfold Clusters of Rovibrational Energy Levels in the Fundamental Vibrational States of H2Se
Journal of molecular spectroscopy, 161 (1) :186-207
1993
Herausgeber: Academic Press455.
Tausch, Michael W.; Wachtendonk, M.; Deissenberger, H.; Porth, H.-R.; G. Weißenhorn, R.
Lehrerband mit didaktischen Hinweisen und Lösungen zu den Aufgaben zu CHEMIE S II STOFF-FORMEL-UMWELT, Lehrbuch für Grund- und Leistungskurse
Herausgeber: C. C. Buchner, Bamberg
1993454.
G\"unther, Michael; Rentrop, P.
Multirate {ROW} methods and latency of electric circuits
Appl.~Numer.~Math., 13 :83--102
1993453.
Günther, Michael; Rentrop, Peter
Multirate ROW methods and latency of electric circuits
Applied Numerical Mathematics, 13 (1) :83–102
1993
Herausgeber: Elsevier452.
Günther, Michael; Rentrop, Peter
Multirate ROW methods and latency of electric circuits
Applied Numerical Mathematics, 13 (1-3) :83--102
1993
Herausgeber: North-Holland451.
Denk, G.; Günther, M.; Schmidt, W.
Olympische Chips: Schaltkreise - Spannung in der Numerik
1993450.
Denk, G.; G\"unther, Michael; Schmidt, W.
Olympische Chips: Schaltkreise -- Spannung in der Numerik
Technische Universit\"at M\"unchen, TUM-Sonderreihe Forschung f\"ur Bayern, Heft 6: Fakult\"at f\"ur Mathematik, Fakult\"at f\"ur Informatik, Seite 14--15
1993449.
[german] Tausch, Michael W.; Kolkowski, M.; Weilert, K.
Ozon - der andere Sauerstoff
Praxis der Naturwissenschaften (Chemie), 42 (1) :26
1993448.
Günther, Michael; Rentrop, Peter
Partitioning and multirate strategies in latent electric circuits
1993447.
Shestakov, Oleg; Demes, H.; Fink, Ewald H.
Radiative lifetimes of the A \(^{2}\)\(\Sigma\)\(_{1/2}\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of lead monohalides
Chemical Physics, 178 (1-3) :561-567
1993446.
Shestakov, Oleg; Demes, H.; Fink, Ewald H.
Radiative lifetimes of the A \(^{2}\)\(\Sigma\)\(_{1/2}\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of lead monohalides
Chemical Physics, 178 (1-3) :561-567
1993445.
Shestakov, Oleg; Demes, H.; Fink, Ewald H.
Radiative lifetimes of the A 2Σ1/2+ and X2 2Π3/2 states of lead monohalides
Chemical Physics, 178 (1-3) :561-567
1993444.
Janssen, H. H. J. M.; Maten, E. J. W.; Houwelingen, D.
Simulation of coupled electromagnetic and heat dissipation problems
, IEE, Colloquium on Coupling Electromagnetic to Other FieldsBand1993 / 117, Seite 3/1-3/3
Herausgeber: Institute of Electrical and Electronics Engineers ({IEEE})
Mai 1993