Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1982

43.

Jensen, Per; Bunker, Philip R.
The geometry and the out-of-plane bending potential function of thioformaldehyde in the A\verb=~=\(^{1}\)A\(_{2}\) and a\verb=~=\(^{3}\)A\(_{2}\) electronic states
Journal of Molecular Spectroscopy, 95 (1) :92-100
1982

42.

Jensen, Per; Bunker, Philip R.
The geometry and the out-of-plane bending potential function of thioformaldehyde in the A\verb=~=\(^{1}\)A\(_{2}\) and a\verb=~=\(^{3}\)A\(_{2}\) electronic states
Journal of Molecular Spectroscopy, 95 (1) :92-100
1982

41.

Jensen, Per; Bunker, Philip R.
The geometry and the out-of-plane bending potential function of thioformaldehyde in the A~1A2 and a~3A2 electronic states
Journal of Molecular Spectroscopy, 95 (1) :92-100
1982

40.

Jensen, Per; Brodersen, Svend
The ν5 Raman band of CH3CD3
Journal of Raman Spectroscopy, 12 (3) :295-299
1982

39.

Tausch, Michael W.; J. Plath, P.
Umlagerungen in (CH)₇⁺-Carbokationen
Revue Roumaine de Chimie, 27 :953
1982
1981

38.

Tausch, Michael W.
BINDUNG UND STRUKTUR - Unterrichtsbuch für die gymnasiale Oberstufe
Herausgeber: Schöningh, Paderborn
1981

37.

Jensen, Per; Brodersen, Svend; Guelachvili, Guy
Determination of A\(_{0}\) for CH\(_{3}\)\(^{35}\)Cl and CH\(_{3}\)\(^{37}\)Cl from the \(\nu\)\(_{4}\) infrared and Raman bands
Journal of Molecular Spectroscopy, 88 (2) :378-393
1981

36.

Jensen, Per; Brodersen, Svend; Guelachvili, Guy
Determination of A\(_{0}\) for CH\(_{3}\)\(^{35}\)Cl and CH\(_{3}\)\(^{37}\)Cl from the \(\nu\)\(_{4}\) infrared and Raman bands
Journal of Molecular Spectroscopy, 88 (2) :378-393
1981

35.

Jensen, Per; Brodersen, Svend; Guelachvili, Guy
Determination of A0 for CH335Cl and CH337Cl from the ν4 infrared and Raman bands
Journal of Molecular Spectroscopy, 88 (2) :378-393
1981

34.

Barnes, Ian; Bastian, V.; Becker, Karl Heinz; Fink, Ewald H.; Zabel, Friedhelm
Rate constant of the reaction of OH with HO\(_{2}\)NO\(_{2}\)
Chemical Physics Letters, 83 (3) :459-464
1981

33.

Barnes, Ian; Bastian, V.; Becker, Karl Heinz; Fink, Ewald H.; Zabel, Friedhelm
Rate constant of the reaction of OH with HO\(_{2}\)NO\(_{2}\)
Chemical Physics Letters, 83 (3) :459-464
1981

32.

Barnes, Ian; Bastian, V.; Becker, Karl Heinz; Fink, Ewald H.; Zabel, Friedhelm
Rate constant of the reaction of OH with HO2NO2
Chemical Physics Letters, 83 (3) :459-464
1981

31.

Tausch, Michael W.
THEORETISCHE UND EXPERIMENTELLE UNTERSUCHUNGEN VON VALENZISOMERISIERUNGEN
Herausgeber: Minerva Publikation, München
1981

30.

Tausch, Michael W.
Vorschlag für den Aufbau und die Bewertung einer Klausur zum Kurs ''Grundreaktionen in der organischen Chemie"
Praxis der Naturwissenschaften (Chemie), 30 :374
1981
1980

29.

Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Emissions of SeO, SeS, and Se\(_{2}\) in the near infrared
Chemical Physics Letters, 73 (2) :297-303
1980

28.

Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Emissions of SeO, SeS, and Se\(_{2}\) in the near infrared
Chemical Physics Letters, 73 (2) :297-303
1980

27.

Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ → X3Σ- Emissions of SeO, SeS, and Se2 in the near infrared
Chemical Physics Letters, 73 (2) :297-303
1980

26.

Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B\(_{0}\) constant of C\(_{6}\)H\(_{6}\)
Journal of Molecular Spectroscopy, 83 (1) :161-174
1980

25.

Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B\(_{0}\) constant of C\(_{6}\)H\(_{6}\)
Journal of Molecular Spectroscopy, 83 (1) :161-174
1980

24.

Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B0 constant of C6H6
Journal of Molecular Spectroscopy, 83 (1) :161-174
1980
1979

23.

Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO\(_{2}\)/DO\(_{2}\) radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
1979

22.

Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO\(_{2}\)/DO\(_{2}\) radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
1979

21.

Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO2/DO2 radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
1979

20.

Tausch, Michael W.; C. Ha{ßs}, E.; J. Plath, P.
Beschreibung von Valenzisomerisierungen durch Strukturvariation auf vollständigen Graphen
Informal Communications in Mathematical Chemistry (MatCh), 7 :289
1979

19.

Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Chemiluminescence of SO(\(^{1}\)\(\Delta\)\(_{g}\),\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\)) sensitized by O\(_{2}\)(\(^{1}\)\(\Delta\)\(_{g}\))
Chemical Physics Letters, 67 (2-3) :310-313
1979