Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1992
392.
G\"unther, Michael
Multirate {Rosenbrock}-{Wanner} Verfahren zur Integration von elektrischen Schaltkreisen
Technische Universit\"at at M\"unchen
1992391.
Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A \(^{2}\)\(\Sigma\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of PbF
Chemical Physics, 165 (2-3) :415-427
1992390.
Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A \(^{2}\)\(\Sigma\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of PbF
Chemical Physics, 165 (2-3) :415-427
1992389.
Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A 2Σ+ and X2 2Π3/2 states of PbF
Chemical Physics, 165 (2-3) :415-427
1992388.
Heilmann, Margareta
Rate of approximation of weighted derivatives by linear combinations of SMD-operators
Numerical Methods in Approximation Theory - Proceedings of the conference held in Oberwolfach Germany, November 24-30, 1991, Seite 97-115
In D. Braess et al., Editor
Herausgeber: Birkhäuser, Basel, Int. Ser. Numer. Math. 105
1992387.
Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO\(_{2}\) molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992386.
Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO\(_{2}\) molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992385.
Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO2 molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992384.
Maten, E. J. W.; Melissen, J. B. M.
Simulation of inductive heating
{IEEE} Transactions on Magnetics, 28 (2) :1287--1290
März 1992
Herausgeber: Institute of Electrical and Electronics Engineers ({IEEE})383.
Tausch, Michael W.; Wachtendonk, M.; Deissenberger, H.; Porth, H.-R.; Weißenhorn, R.G.
STOFF-FORMEL-UMWELT, BAND 2: ORGANISCHE CHEMIE - ANGEWANDTE CHEMIE, Lehrbuch für die S II, (Grund- und Leistungskurse), 272 Seiten
Herausgeber: C. C. Buchner, Bamberg
1992382.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992381.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992380.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N2 reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992379.
Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO\(_{3}\) Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992378.
Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO\(_{3}\) Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992377.
Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO3 Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992376.
Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{1/2}\) electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992375.
Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{1/2}\) electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992374.
Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X2 2Π3/2 → X1 2Π1/2 electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992373.
Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si\(_{2}\)C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992372.
Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si\(_{2}\)C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992371.
Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si2C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992- 1991
370.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991369.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991368.
Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991