Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1992

392.

G\"unther, Michael
Multirate {Rosenbrock}-{Wanner} Verfahren zur Integration von elektrischen Schaltkreisen
Technische Universit\"at at M\"unchen
1992

391.

Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A \(^{2}\)\(\Sigma\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of PbF
Chemical Physics, 165 (2-3) :415-427
1992

390.

Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A \(^{2}\)\(\Sigma\)\(^{+}\) and X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) states of PbF
Chemical Physics, 165 (2-3) :415-427
1992

389.

Shestakov, Oleg; Pravilov, A. M.; Demes, H.; Fink, Ewald H.
Radiative lifetime and quenching of the A 2Σ+ and X2 2Π3/2 states of PbF
Chemical Physics, 165 (2-3) :415-427
1992

388.

Heilmann, Margareta
Rate of approximation of weighted derivatives by linear combinations of SMD-operators
Numerical Methods in Approximation Theory - Proceedings of the conference held in Oberwolfach Germany, November 24-30, 1991, Seite 97-115
In D. Braess et al., Editor
Herausgeber: Birkhäuser, Basel, Int. Ser. Numer. Math. 105
1992

387.

Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO\(_{2}\) molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992

386.

Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO\(_{2}\) molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992

385.

Bunker, Philip R.; Hamilton, I. P.; Jensen, Per
Rotation-vibration energies for the HO2 molecule
Journal of Molecular Spectroscopy, 155 (1) :44-54
1992

384.

Maten, E. J. W.; Melissen, J. B. M.
Simulation of inductive heating
{IEEE} Transactions on Magnetics, 28 (2) :1287--1290
März 1992
Herausgeber: Institute of Electrical and Electronics Engineers ({IEEE})

383.

Tausch, Michael W.; Wachtendonk, M.; Deissenberger, H.; Porth, H.-R.; Weißenhorn, R.G.
STOFF-FORMEL-UMWELT, BAND 2: ORGANISCHE CHEMIE - ANGEWANDTE CHEMIE, Lehrbuch für die S II, (Grund- und Leistungskurse), 272 Seiten
Herausgeber: C. C. Buchner, Bamberg
1992

382.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

381.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N\(_{2}\) reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

380.

Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Schrey, G.; Wiesen, Peter
Temperature dependence of the CH+N2 reaction at low total pressure
Chemical Physics Letters, 195 (4) :322-328
1992

379.

Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO\(_{3}\) Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992

378.

Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO\(_{3}\) Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992

377.

Benter, Thorsten; Becker, Eilhard; Wille, Uta; Rahman, M. M.; Schindler, Ralph N.
The Determination of Rate Constants for the Reactions of Some Alkenes with the NO3 Radical
Berichte der Bunsengesellschaft für physikalische Chemie, 96 (6) :769-775
1992

376.

Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{1/2}\) electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992

375.

Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X\(_{2}\) \(^{2}\)\(\Pi\)\(_{3/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{1/2}\) electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992

374.

Ziebarth, K.; Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The X2 2Π3/2 → X1 2Π1/2 electronic band systems of lead monohalides in the near infrared
Chemical Physics Letters, 190 (3-4) :271-278
1992

373.

Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si\(_{2}\)C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992

372.

Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si\(_{2}\)C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992

371.

Barone, Vincenzo; Jensen, Per; Minichino, Camilla
Vibro-rotational analysis of Si2C from an ab initio potential energy surface. A comparison between perturbative and variational methods
Journal of Molecular Spectroscopy, 154 (2) :252-264
1992
1991

370.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991

369.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991

368.

Fink, Ewald H.; Setzer, Klaus-Dieter; Ramsay, D. A.; Vervloet, M.
A new band spectrum of BiO in the near-infrared region
Chemical Physics Letters, 179 (1-2) :103-108
1991