Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1996
643.
Tausch, Michael W.; Wachtendonk, M.; Porth, H.-R.; Schulze, I.; Wambach, H.
STOFF-FORMEL-UMWELT, CHEMIE S I
Herausgeber: C. C. Buchner, Bamberg
1996642.
G\"unther, Michael; Rentrop, P.
The {NAND-gate} -- a benchmark for the numerical simulation of digital circuits
In W.~Mathis and P.~Noll, Editor, 2.ITG-Diskussionssitzung ''Neue Anwendungen Theoretischer Konzepte in der Elektrotechnik - mit Gedenksitzung zum 50. Todestag von Wilhelm Cauer'', Seite 27--33
In W.~Mathis and P.~Noll, Editor
Herausgeber: Berlin, VDE-Verlag
1996641.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press640.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press639.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996638.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996637.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) → X\(^{3}\)\(\Sigma\)\(^{-}\)(X\(_{2}\)1) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press636.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) → X\(^{3}\)\(\Sigma\)\(^{-}\)(X\(_{2}\)1) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press635.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press634.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press633.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ → X3Σ- Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press632.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ → X3Σ- transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996631.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) → X3Σ-(X21) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press630.
Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press629.
Günther, Michael; Rentrop, Peter
The differential-algebraic index concept in electric circuit simulation
, Proceedings of the 3rd International Congress on Industrial and Applied MathematicsBand76, Seite 91–94
Herausgeber: Akademie Verlag Berlin
1996628.
The differential-algebraic index concept in electric circuit simulation
Zeitschrift fur angewandte Mathematik und Mechanik, 76 (1) :91--94
1996627.
Denk, Georg; Günther, Michael
The influence of MOSFET model and network equations on circuit simulation
Preprint (1842)
1996
Herausgeber: Technische Hochschule Darmstadt626.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H\(_{2}\)\(^{16}\)O
Journal of Chemical Physics, 105 (15) :6490-6497
1996625.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H\(_{2}\)\(^{16}\)O
Journal of Chemical Physics, 105 (15) :6490-6497
1996624.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H216O
Journal of Chemical Physics, 105 (15) :6490-6497
1996623.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press622.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press621.
Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press620.
Kozin, Igor N.; Jensen, Per; Polanz, Oliver; Klee, Stefan; Poteau, Laurent; Demaison, Jean
The Rotational Spectrum of H\(_{2}\)Te
Journal of Molecular Spectroscopy, 180 (2) :402-413
1996
Herausgeber: Academic Press619.
Kozin, Igor N.; Jensen, Per; Polanz, Oliver; Klee, Stefan; Poteau, Laurent; Demaison, Jean
The Rotational Spectrum of H\(_{2}\)Te
Journal of Molecular Spectroscopy, 180 (2) :402-413
1996
Herausgeber: Academic Press