Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1996

643.

Tausch, Michael W.; Wachtendonk, M.; Porth, H.-R.; Schulze, I.; Wambach, H.
STOFF-FORMEL-UMWELT, CHEMIE S I
Herausgeber: C. C. Buchner, Bamberg
1996

642.

G\"unther, Michael; Rentrop, P.
The {NAND-gate} -- a benchmark for the numerical simulation of digital circuits
In W.~Mathis and P.~Noll, Editor, 2.ITG-Diskussionssitzung ''Neue Anwendungen Theoretischer Konzepte in der Elektrotechnik - mit Gedenksitzung zum 50. Todestag von Wilhelm Cauer'', Seite 27--33
In W.~Mathis and P.~Noll, Editor
Herausgeber: Berlin, VDE-Verlag
1996

641.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press

640.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press

639.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996

638.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996

637.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) → X\(^{3}\)\(\Sigma\)\(^{-}\)(X\(_{2}\)1) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press

636.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) → X\(^{3}\)\(\Sigma\)\(^{-}\)(X\(_{2}\)1) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press

635.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press

634.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press

633.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ → X3Σ- Transitions of AsH and AsD
Journal of Molecular Spectroscopy, 178 (2) :165-171
1996
Herausgeber: Academic Press

632.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ → X3Σ- transitions of PH and PD
Chemical Physics Letters, 249 (3-4) :183-190
1996

631.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) → X3Σ-(X21) Transitions of SbH and SbD
Journal of Molecular Spectroscopy, 179 (1) :79-84
1996
Herausgeber: Academic Press

630.

Beutel, M.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) States of BiCl, BiBr, and BiI
Journal of Molecular Spectroscopy, 175 (1) :48-53
1996
Herausgeber: Academic Press

629.

Günther, Michael; Rentrop, Peter
The differential-algebraic index concept in electric circuit simulation
, Proceedings of the 3rd International Congress on Industrial and Applied MathematicsBand76, Seite 91–94
Herausgeber: Akademie Verlag Berlin
1996

628.


The differential-algebraic index concept in electric circuit simulation
Zeitschrift fur angewandte Mathematik und Mechanik, 76 (1) :91--94
1996

627.

Denk, Georg; Günther, Michael
The influence of MOSFET model and network equations on circuit simulation
Preprint (1842)
1996
Herausgeber: Technische Hochschule Darmstadt

626.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H\(_{2}\)\(^{16}\)O
Journal of Chemical Physics, 105 (15) :6490-6497
1996

625.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H\(_{2}\)\(^{16}\)O
Journal of Chemical Physics, 105 (15) :6490-6497
1996

624.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The potential energy surface of H216O
Journal of Chemical Physics, 105 (15) :6490-6497
1996

623.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press

622.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press

621.

Polyansky, Oleg L.; Jensen, Per; Tennyson, Jonathan
The Potential Energy Surface of Hydrogen Sulfide
Journal of Molecular Spectroscopy, 178 (2) :184-188
1996
Herausgeber: Academic Press

620.

Kozin, Igor N.; Jensen, Per; Polanz, Oliver; Klee, Stefan; Poteau, Laurent; Demaison, Jean
The Rotational Spectrum of H\(_{2}\)Te
Journal of Molecular Spectroscopy, 180 (2) :402-413
1996
Herausgeber: Academic Press

619.

Kozin, Igor N.; Jensen, Per; Polanz, Oliver; Klee, Stefan; Poteau, Laurent; Demaison, Jean
The Rotational Spectrum of H\(_{2}\)Te
Journal of Molecular Spectroscopy, 180 (2) :402-413
1996
Herausgeber: Academic Press