Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1984

103.

Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH\(_{2}\)N\(_{2}\) in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984

102.

Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH\(_{2}\)N\(_{2}\) in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984

101.

Becker, Karl Heinz; Horie, O.; Wiesen, Peter
The formation of CH radicals during the photolysis of CH2N2 in the presence of hydrogen and oxygen atoms
Journal of Photochemistry, 24 (3) :293-297
1984
1983

100.

Bunker, Philip R.; Jensen, Per
A refined potential surface for the X\verb=~=\(^{3}\)B\(_{1}\) electronic state of methylene CH\(_{2}\)
The Journal of Chemical Physics, 79 (3) :1224-1228
1983

99.

Bunker, Philip R.; Jensen, Per
A refined potential surface for the X\verb=~=\(^{3}\)B\(_{1}\) electronic state of methylene CH\(_{2}\)
The Journal of Chemical Physics, 79 (3) :1224-1228
1983

98.

Bunker, Philip R.; Jensen, Per
A refined potential surface for the X~3B1 electronic state of methylene CH2
The Journal of Chemical Physics, 79 (3) :1224-1228
1983

97.

Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
1983

96.

Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) and a\(^{1}\)\(\Delta\) emissions from group VI-VI diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
1983

95.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\) emission of Pl
Chemical Physics Letters, 102 (5) :404-408
1983

94.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules: b0\(^{+}\) → X\(_{1}\)0\(^{+}\) emission of Pl
Chemical Physics Letters, 102 (5) :404-408
1983

93.

Winter, R.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ and a1Δ emissions from group VI-VI diatomic molecules: b0+ → X10+, X21 emissions of TeSe
Chemical Physics Letters, 94 (3) :335-338
1983

92.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, Jürgen
b1Σ+ Emissions from group V-VII diatomic molecules: b0+ → X10+ emission of Pl
Chemical Physics Letters, 102 (5) :404-408
1983

91.

Tausch, Michael W.
Chemische Solarenergiespeicherung in Valenzisomeren
Praxis der Naturwissenschaften (Chemie), 32 :79
1983

90.

Tausch, Michael W.
DER UV-TAUCHLAMPENREAKTOR FÜR PHOTOCHEMISCHE SCHULVERSUCHE, Monographie mit Versuchsanleitungen und didaktischen Hinweisen
Herausgeber: SCS Jürgens\&Co KG, Bremen
1983

89.

Jensen, Per
HCNO as a semirigid bender: The degenerate \(\nu\)\(_{4}\) state
Journal of Molecular Spectroscopy, 101 (2) :422-439
1983

88.

Jensen, Per
HCNO as a semirigid bender: The degenerate \(\nu\)\(_{4}\) state
Journal of Molecular Spectroscopy, 101 (2) :422-439
1983

87.

Jensen, Per
HCNO as a semirigid bender: The degenerate ν4 state
Journal of Molecular Spectroscopy, 101 (2) :422-439
1983

86.

Holstein, K. J.; Fink, Ewald H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
Mechanisms of perhydroxyl HO\(_{2}\)(A\(^{2}\)A') excitation in various chemical systems
The Journal of Physical Chemistry, 87 (20) :3943-3948
1983

85.

Holstein, K. J.; Fink, Ewald H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
Mechanisms of perhydroxyl HO\(_{2}\)(A\(^{2}\)A') excitation in various chemical systems
The Journal of Physical Chemistry, 87 (20) :3943-3948
1983

84.

Holstein, K. J.; Fink, Ewald H.; Wildt, Jürgen; Winter, R.; Zabel, Friedhelm
Mechanisms of perhydroxyl HO2(A2A') excitation in various chemical systems
The Journal of Physical Chemistry, 87 (20) :3943-3948
1983

83.

Wildt, J{ü}rgen; Fink, Ewald H.; Winter, R.; Zabel, Friedhelm
Radiative lifetime and quenching of SO(b\(^{1}\)\(\Sigma\)\(^{+}\),\(\nu\)'=0)
Chemical Physics, 80 (1-2) :167-175
1983

82.

Wildt, J{ü}rgen; Fink, Ewald H.; Winter, R.; Zabel, Friedhelm
Radiative lifetime and quenching of SO(b\(^{1}\)\(\Sigma\)\(^{+}\),\(\nu\)'=0)
Chemical Physics, 80 (1-2) :167-175
1983

81.

Wildt, Jürgen; Fink, Ewald H.; Winter, R.; Zabel, Friedhelm
Radiative lifetime and quenching of SO(b1Σ+,ν'=0)
Chemical Physics, 80 (1-2) :167-175
1983

80.

Wildt, J{ü}rgen; Bielefeld, M.; Fink, Ewald H.; Winter, R.; Zabel, Friedhelm
Radiative livetimes of the metastable b\(^{1}\)\(\Sigma\) states of SO, SeO, PCl and PBr
Bulletin des Sociétés Chimiques Belges, 92 (6-7) :523-524
1983

79.

Wildt, J{ü}rgen; Bielefeld, M.; Fink, Ewald H.; Winter, R.; Zabel, Friedhelm
Radiative livetimes of the metastable b\(^{1}\)\(\Sigma\) states of SO, SeO, PCl and PBr
Bulletin des Sociétés Chimiques Belges, 92 (6-7) :523-524
1983