Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1985

128.

Spirko, Vladim{í}r; Jensen, Per; Bunker, Philip R.; Cejchan, A.
The development of a new Morse-oscillator based rotation-vibration Hamiltonian for H\(_{3}\)\(^{+}\)
Journal of Molecular Spectroscopy, 112 (1) :183-202
1985

127.

Spirko, Vladim{í}r; Jensen, Per; Bunker, Philip R.; Cejchan, A.
The development of a new Morse-oscillator based rotation-vibration Hamiltonian for H\(_{3}\)\(^{+}\)
Journal of Molecular Spectroscopy, 112 (1) :183-202
1985

126.

Spirko, Vladimír; Jensen, Per; Bunker, Philip R.; Cejchan, A.
The development of a new Morse-oscillator based rotation-vibration Hamiltonian for H3+
Journal of Molecular Spectroscopy, 112 (1) :183-202
1985

125.

Lamour, R.; Hanke, M.; Winkler, R.
The program system ‘RWA’ (version 2) for the solution of TPBVP - fundamentals and algorithms
, Seminarbericht 67 der Sektion MathematikBand67
Humboldt-Universität zu Berlin
1985
1984

124.

Morillon-Chapey, M.; Guelachvili, Guy; Jensen, Per
Analysis of the high resolution spectrum of the \(\nu\)\(_{2}\) and \(\nu\)\(_{5}\) absorption bands of methyl chloride
Canadian Journal of Physics, 62 (3) :247-253
1984
Herausgeber: NRC Research Press Ottawa, Canada

123.

Morillon-Chapey, M.; Guelachvili, Guy; Jensen, Per
Analysis of the high resolution spectrum of the \(\nu\)\(_{2}\) and \(\nu\)\(_{5}\) absorption bands of methyl chloride
Canadian Journal of Physics, 62 (3) :247-253
1984
Herausgeber: NRC Research Press Ottawa, Canada

122.

Morillon-Chapey, M.; Guelachvili, Guy; Jensen, Per
Analysis of the high resolution spectrum of the ν2 and ν5 absorption bands of methyl chloride
Canadian Journal of Physics, 62 (3) :247-253
1984
Herausgeber: NRC Research Press Ottawa, Canada

121.

Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules. b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 band systems of AsCl and AsBr
Chemical Physics Letters, 111 (1-2) :100-104
1984

120.

Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules. b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 band systems of AsCl and AsBr
Chemical Physics Letters, 111 (1-2) :100-104
1984

119.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules. b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of AsI and SbI
Chemical Physics Letters, 104 (4) :383-388
1984

118.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) Emissions from group V-VII diatomic molecules. b0\(^{+}\) → X\(_{1}\)0\(^{+}\), X\(_{2}\)1 emissions of AsI and SbI
Chemical Physics Letters, 104 (4) :383-388
1984

117.

Kruse, H.; Winter, R.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ Emissions from group V-VII diatomic molecules. b0+ → X10+, X21 band systems of AsCl and AsBr
Chemical Physics Letters, 111 (1-2) :100-104
1984

116.

Winter, R.; Kruse, H.; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ Emissions from group V-VII diatomic molecules. b0+ → X10+, X21 emissions of AsI and SbI
Chemical Physics Letters, 104 (4) :383-388
1984

115.

Jensen, Per
C\(_{3}\)O\(_{2}\) as a semirigid bender: The degenerate \(\nu\)\(_{5}\) state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984

114.

Jensen, Per
C\(_{3}\)O\(_{2}\) as a semirigid bender: The degenerate \(\nu\)\(_{5}\) state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984

113.

Jensen, Per
C3O2 as a semirigid bender: The degenerate ν5 state
Journal of Molecular Spectroscopy, 104 (1) :59-71
1984

112.

Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH\(_{3}\)NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984

111.

Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH\(_{3}\)NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984

110.

Kreglewski, Marek; Jensen, Per
Determination of the skeletal bending potential function for SiH3NCO from the microwave spectrum
Journal of Molecular Spectroscopy, 103 (2) :312-320
1984

109.

Glöckner, W.; Tausch, Michael W.; Autorenteam
MATERIALIEN FÜR DER KURSUNTERRICHT CHEMIE, Aufgabensammlung mit Klausur- und Abituraufgaben aus allen Bereichen der Schulchemie, 3 Bände
Herausgeber: Aulis Deubner\&Co KG, Köln
1984

108.

Winkler, R.
Numerische Behandlung von parameterabhängigen Zwei-Punkt-Randwertaufgaben unter Berücksichtigung von Verzweigungsproblemen
Humboldt-Universität zu Berlin
1984

107.

Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))-sensitized chemiluminescence of a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) and b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984

106.

Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, J{ü}rgen; Winter, R.; Zabel, Friedhelm
O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))-sensitized chemiluminescence of a\(^{1}\)\(\Delta\) → X\(^{3}\)\(\Sigma\)\(^{-}\) and b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984

105.

Bielefeld, M.; Elfers, G.; Fink, Ewald H.; Kruse, H.; Wildt, Jürgen; Winter, R.; Zabel, Friedhelm
O2(a1Δg)-sensitized chemiluminescence of a1Δ → X3Σ- and b1Σ+ → X3Σ- transitions of group VI-group VI and group V-group VII diatomic molecules
Journal of Photochemistry, 25 (2-4) :419-438
1984

104.

Maten, E. J. W.
Stability analysis of finite difference methods for fourth order parabolic partial differential equations
Rijksuniversiteit Utrecht
1984