Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1989

253.

Jensen, Per
The potential energy surface for the C\(_{3}\) molecule determined from experimental data. Evidence for a bent equilibrium structure
Collection of Czechoslovak Chemical Communications, 54 (5) :1209-1218
1989
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.

252.

Jensen, Per
The potential energy surface for the C\(_{3}\) molecule determined from experimental data. Evidence for a bent equilibrium structure
Collection of Czechoslovak Chemical Communications, 54 (5) :1209-1218
1989
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.

251.

Jensen, Per
The potential energy surface for the C3 molecule determined from experimental data. Evidence for a bent equilibrium structure
Collection of Czechoslovak Chemical Communications, 54 (5) :1209-1218
1989
Herausgeber: Institute of Organic Chemistry and Biochemistry AS CR, v.v.i.

250.

Jensen, Per
The potential energy surface for the electronic ground state of the water molecule determined from experimental data using a variational approach
Journal of Molecular Spectroscopy, 133 (2) :438-460
1989

249.

Jensen, Per
The potential energy surface for the electronic ground state of the water molecule determined from experimental data using a variational approach
Journal of Molecular Spectroscopy, 133 (2) :438-460
1989

248.

Jensen, Per
The potential energy surface for the electronic ground state of the water molecule determined from experimental data using a variational approach
Journal of Molecular Spectroscopy, 133 (2) :438-460
1989

247.

Schönfeld, J; Loennecken, I; Gückel, C
Unilateral pulsating tinnitus: paraganglioma of the glomus jugulare with predominantly vascular extension
Medizinische Klinik (Munich, Germany: 1983), 84 (9) :445--449
1989

246.

Heilmann, Margareta; Müller, Manfred
Weighted simultaneous L_p-approximation by the method of Baskakov-Durrmeyer operators
Approximation Theory VI, Proc. 6th Int. Symp., College Station/TX USA1989Band 1, Seite 331-332
1989
1988

245.

Jensen, Per; Kraemer, Wolfgang P.
A comparison of perturbative and variational rotation-vibration energies calculated for HOC\(^{+}\) and C\(_{3}\) using the nonrigid bender and MORBID Hamiltonians
Journal of Molecular Spectroscopy, 129 (1) :172-185
1988

244.

Jensen, Per; Kraemer, Wolfgang P.
A comparison of perturbative and variational rotation-vibration energies calculated for HOC\(^{+}\) and C\(_{3}\) using the nonrigid bender and MORBID Hamiltonians
Journal of Molecular Spectroscopy, 129 (1) :172-185
1988

243.

Jensen, Per; Kraemer, Wolfgang P.
A comparison of perturbative and variational rotation-vibration energies calculated for HOC+ and C3 using the nonrigid bender and MORBID Hamiltonians
Journal of Molecular Spectroscopy, 129 (1) :172-185
1988

242.

Rahman, M. M.; Becker, Eilhard; Benter, Thorsten; Schindler, Ralph N.
A Gasphase Kinetic Investigation of the System F + HNO\(_{3}\) and the Determination of Absolute Rate Constants for the Reaction of the NO\(_{3}\) Radical with CH\(_{3}\)SH, 2-Methylpropene, 1,3-Butadiene and 2,3-Dimethyl-2-Butene
Berichte der Bunsengesellschaft für physikalische Chemie, 92 (1) :91-100
1988

241.

Rahman, M. M.; Becker, Eilhard; Benter, Thorsten; Schindler, Ralph N.
A Gasphase Kinetic Investigation of the System F + HNO\(_{3}\) and the Determination of Absolute Rate Constants for the Reaction of the NO\(_{3}\) Radical with CH\(_{3}\)SH, 2-Methylpropene, 1,3-Butadiene and 2,3-Dimethyl-2-Butene
Berichte der Bunsengesellschaft für physikalische Chemie, 92 (1) :91-100
1988

240.

Rahman, M. M.; Becker, Eilhard; Benter, Thorsten; Schindler, Ralph N.
A Gasphase Kinetic Investigation of the System F + HNO3 and the Determination of Absolute Rate Constants for the Reaction of the NO3 Radical with CH3SH, 2-Methylpropene, 1,3-Butadiene and 2,3-Dimethyl-2-Butene
Berichte der Bunsengesellschaft für physikalische Chemie, 92 (1) :91-100
1988

239.

Jensen, Per
A new morse oscillator-rigid bender internal dynamics (MORBID) Hamiltonian for triatomic molecules
Journal of Molecular Spectroscopy, 128 (2) :478-501
1988

238.

Jensen, Per
A new morse oscillator-rigid bender internal dynamics (MORBID) Hamiltonian for triatomic molecules
Journal of Molecular Spectroscopy, 128 (2) :478-501
1988

237.

Jensen, Per
A new morse oscillator-rigid bender internal dynamics (MORBID) Hamiltonian for triatomic molecules
Journal of Molecular Spectroscopy, 128 (2) :478-501
1988

236.

Jensen, Per; Kraemer, Wolfgang P.
A variational calculation of the rotation-vibration energies for CNC\(^{+}\) and CCN\(^{+}\)
Journal of Molecular Spectroscopy, 129 (1) :216-222
1988

235.

Jensen, Per; Kraemer, Wolfgang P.
A variational calculation of the rotation-vibration energies for CNC\(^{+}\) and CCN\(^{+}\)
Journal of Molecular Spectroscopy, 129 (1) :216-222
1988

234.

Jensen, Per; Kraemer, Wolfgang P.
A variational calculation of the rotation-vibration energies for CNC+ and CCN+
Journal of Molecular Spectroscopy, 129 (1) :216-222
1988

233.

Jensen, Per
A variational calculation of the rotation-vibration energies for H\(_{2}\)O from Ab initio data
Journal of Molecular Structure, 190 :149-161
1988

232.

Jensen, Per
A variational calculation of the rotation-vibration energies for H\(_{2}\)O from Ab initio data
Journal of Molecular Structure, 190 :149-161
1988

231.

Jensen, Per
A variational calculation of the rotation-vibration energies for H2O from Ab initio data
Journal of Molecular Structure, 190 :149-161
1988

230.

Benter, Thorsten; Schindler, Ralph N.
Absolute rate coefficients for the reaction of NO\(_{3}\) radicals with simple dienes
Chemical Physics Letters, 145 (1) :67-70
1988

229.

Benter, Thorsten; Schindler, Ralph N.
Absolute rate coefficients for the reaction of NO\(_{3}\) radicals with simple dienes
Chemical Physics Letters, 145 (1) :67-70
1988