Applied and Computational Mathematics (ACM)

Semiconductor

Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.

Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.

Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:

Former and ongoing projects

Cooperations

Open subjects for theses

  • Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)

Publications



1994

503.

Gerstberger, Robert; Günther, Michael
Parallelization of a charge-oriented extrapolation method on the SNI-KSR1
Overview of Research on the Parallel Computer SNI-KSR at the Leibniz-Rechenzentrum Miinchen, 9401 :57--61
1994
Herausgeber: M\"unchen, LRZ

502.

Günther, Michael; Rentrop, Peter
Partitioning and multirate strategies in latent electric circuits
In Bank, R. E. and Gajewski, H. and Bulirsch, R. and Merten, K., Editor, Mathematical modelling and simulation of electrical circuits and semiconductor devicesausISNM International Series of Numerical Mathematics, Seite 33–60
In Bank, R. E. and Gajewski, H. and Bulirsch, R. and Merten, K., Editor
Herausgeber: Birkhäuser Basel
1994

501.

[german] Tausch, Michael W.
Photo-Blue-Bottle Modellversuche zur Photosynthese und zur Atmung
Praxis der Naturwissenschaften (Chemie), 43 (3) :13
1994

500.

Klamroth, Kathrin
Ramsey-Zahlen für Mengen von Graphen
Technical University of Braunschweig
1994

499.

Benter, Thorsten; Liesner, M.; Schindler, Ralph N.; Skov, H.; Hjorth, J.; Restelli, G.
REMPI-MS and FTIR Study of NO\(_{2}\) and Oxirane Formation in the Reactions of Unsaturated Hydrocarbons with NO\(_{3}\) Radicals
The Journal of Physical Chemistry, 98 (41) :10492-10496
1994

498.

Benter, Thorsten; Liesner, M.; Schindler, Ralph N.; Skov, H.; Hjorth, J.; Restelli, G.
REMPI-MS and FTIR Study of NO\(_{2}\) and Oxirane Formation in the Reactions of Unsaturated Hydrocarbons with NO\(_{3}\) Radicals
The Journal of Physical Chemistry, 98 (41) :10492-10496
1994

497.

Benter, Thorsten; Liesner, M.; Schindler, Ralph N.; Skov, H.; Hjorth, J.; Restelli, G.
REMPI-MS and FTIR Study of NO2 and Oxirane Formation in the Reactions of Unsaturated Hydrocarbons with NO3 Radicals
The Journal of Physical Chemistry, 98 (41) :10492-10496
1994

496.

KIELAU, G; Maißer, P
SIMULATION OF BOBSLED RUNS-PAPER PRESENTED AT THE GAMM ANNUAL-MEETING IN DRESDEN, APRIL 12-16, 1993
1994

495.

Kielau, Gerald; Maißer, P
Simulation von Fahren gesteuerter Bobschlitten
Zeitschrift für angewandte Mathematik und Mechanik, 74 (9) :434--435
1994

494.

Günther, Michael; Rentrop, Peter
Suitable one-step methods for quasilinear-implicit ode's
Herausgeber: Mathematisches Institut und Institut für Informatik der Technischen~…
1994

493.

Auwera, J. Vander; Holland, J. K.; Jensen, Per; Johns, John W. C.
The \(\nu\)\(_{6}\) band system of C\(_{3}\)O\(_{2}\) near 540 cm\(^{-1}\)
Journal of Molecular Spectroscopy, 163 (2) :529-540
1994
Herausgeber: Academic Press

492.

Auwera, J. Vander; Holland, J. K.; Jensen, Per; Johns, John W. C.
The \(\nu\)\(_{6}\) band system of C\(_{3}\)O\(_{2}\) near 540 cm\(^{-1}\)
Journal of Molecular Spectroscopy, 163 (2) :529-540
1994
Herausgeber: Academic Press

491.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press

490.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press

489.

Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\) (a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) Transition of Bi\(_{2}\)
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press

488.

Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\) (a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) Transition of Bi\(_{2}\)
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press

487.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\)(a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) transition of Sb\(_{2}\)
Chemical Physics Letters, 218 (1-2) :13-16
1994

486.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a \(^{3}\)\(\Sigma\)\(_{u}\)\(^{+}\)(a\(_{1}\) 1\(_{u}\)) → X \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) (X 0\(_{g}\)\(^{+}\)) transition of Sb\(_{2}\)
Chemical Physics Letters, 218 (1-2) :13-16
1994

485.

Breidohr, R.; Setzer, Klaus-Dieter; Shestakov, Oleg; Fink, Ewald H.; Zyrnicki, W.
The a 3Σu+ (a1 1u) → X 1Σg+ (X 0g+) Transition of Bi2
Journal of Molecular Spectroscopy, 166 (2) :251-263
1994
Herausgeber: Academic Press

484.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a 3Σu+(a1 1u) → X 1Σg+ (X 0g+) transition of Sb2
Chemical Physics Letters, 218 (1-2) :13-16
1994

483.

Breidohr, R.; Shestakov, Oleg; Fink, Ewald H.
The a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP, BiAs, and BiSb
Journal of Molecular Spectroscopy, 168 (1) :126-135
1994
Herausgeber: Academic Press

482.

Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994

481.

Shestakov, Oleg; Fink, Ewald H.
The a\(^{1}\)\(\Delta\)(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994

480.

Shestakov, Oleg; Fink, Ewald H.
The a1Δ(a2) state of BiF
Chemical Physics Letters, 229 (3) :273-278
1994

479.

Tashkun, Sergey A.; Jensen, Per
The low-energy part of the potential function for the electronic ground state of NO\(_{2}\) derived from experiment
Journal of Molecular Spectroscopy, 165 (1) :173-184
1994
Herausgeber: Academic Press