Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1995
603.
Gerstberger, R.; Günther, M.
Charge-oriented extrapolation methods in digital circuit simulation
Applied Numerical Mathematics, 18 (1) :115–125
1995
Herausgeber: Elsevier602.
Gerstberger, Robert; Günther, Michael
Charge-oriented extrapolation methods in digital circuit simulation
Applied numerical mathematics, 18 (1-3) :115--125
1995
Herausgeber: North-Holland601.
Flaud, Jean-Marie; Camy-Peyret, C.; B{ü}rger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the \(\nu\)\(_{1}\)/\(\nu\)\(_{3}\) vibrational states of H\(_{2}\)\(^{80}\)Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press600.
Flaud, Jean-Marie; Camy-Peyret, C.; B{ü}rger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the \(\nu\)\(_{1}\)/\(\nu\)\(_{3}\) vibrational states of H\(_{2}\)\(^{80}\)Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press599.
Flaud, Jean-Marie; Camy-Peyret, C.; Bürger, H.; Jensen, Per; Kozin, Igor N.
Experimental evidence for the formation of fourfold rovibrational energy clusters in the ν1/ν3 vibrational states of H280Se
Journal of Molecular Spectroscopy, 172 (1) :126-134
1995
Herausgeber: Academic Press598.
Heilmann, Margareta
Explicit Voronovskaja-type results for linear combinations of BDT-operators
Approximation Theory and its Applications, 11 (1) :54-61
1995597.
Ehrhardt, M.
Finite Differenzenverfahren für hyperbolische Systeme mit absorbierenden Randbedingungen
Technische Universität Berlin
1995596.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H\(_{2}\)Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995595.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H\(_{2}\)Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995594.
Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Kozin, Igor N.
Fourfold clusters of rovibrational energies in H2Te studied with an ab initio potential energy function
Chemical Physics, 190 (2-3) :179-189
1995593.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press592.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a \(^{3}\)\(\Sigma\)\(^{+}\) (a\(_{1}\) 1) → X \(^{1}\)\(\Sigma\)\(^{+}\) (X 0\(^{+}\)) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press591.
Breidohr, R.; Shestakov, Oleg; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the a 3Σ+ (a1 1) → X 1Σ+ (X 0+) Transitions of BiP and BiAs
Journal of Molecular Spectroscopy, 172 (2) :369-377
1995
Herausgeber: Academic Press590.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press589.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X\(_{2}\) \(^{2}\)\(\Pi\)\(_{1/2}\) → X\(_{1}\) \(^{2}\)\(\Pi\)\(_{3/2}\) Fine-Structure Transitions of \(^{130}\)TeF and \(^{130}\)Te\(^{35}\)Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press588.
Ziebarth, K.; Setzer, Klaus-Dieter; Fink, Ewald H.
High-Resolution Study of the X2 2Π1/2 → X1 2Π3/2 Fine-Structure Transitions of 130TeF and 130Te35Cl
Journal of Molecular Spectroscopy, 173 (2) :488-498
1995
Herausgeber: Academic Press587.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
Preprint (1745)
1995
Herausgeber: Technische Hochschule Darmstadt586.
Günther, Michael; Denk, Georg; Feldmann, Uwe
How models for MOS transistors reflect charge distribution effects
1995585.
Günther, Michael; Denk, Georg; Feldmann, Uwe
Impact of modeling and integration scheme on simulation of MOS-circuits
In Breitenecker, F. and Husinsky, I., Editor, Eurosim'95 Simulation Congress. Proceedings of the 1995 EUROSIM Conference, EUROSIM '95, Seite 385–390
In Breitenecker, F. and Husinsky, I., Editor
Herausgeber: Elsevier
1995584.
G\"unther, Michael; Denk, G.; Feldmann, U.
Impact of modeling and integration scheme on simulation of MOS-circuits
In F.~Breitenecker and I.~Husinsky., Editor, Eurosim'95 Simulation Congress, Seite 385--390
In F.~Breitenecker and I.~Husinsky., Editor
Herausgeber: Amsterdam, Elsevier
1995583.
Jacob, Birgit; Drăgan, Vasile; Pritchard, Anthony J.
Infinite-dimensional time-varying systems with nonlinear output feedback
Integral Equations Operator Theory, 22 (4) :440--462
1995582.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995581.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C\(_{2}\)H\(_{4}\) reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995580.
Becker, Karl Heinz; Kurtenbach, Ralf; Wiesen, Peter
Kinetic study of the NCO + C2H4 reaction
Journal of Physical Chemistry, 99 (16) :5986-5991
1995579.
G\"unther, Michael
Ladungsorientierte {Rosenbrock}-{Wanner}-Methoden zur numerischen Simulation digitaler Schaltungen
Band 20(168) aus Fortschritt-Berichte VDI
Herausgeber: VDI-Verlag D\"usseldorf
1995