Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1993
443.
Schilders, W. H. A.; Maten, E. J. W.; Rusch, J. J.; Heynderickx, I. E. J.
Simulation of non-isothermal Couette flow of liquid crystalline polymers
In Taylor, C., Editor, Numerical methods in laminar and turbulent flowBand8(1), Seite 480-491
In Taylor, C., Editor
Herausgeber: Pineridge Press Lmt, Swansea, UK
1993442.
Maten, E. J. W.
Simulation of radiation heat transfer in television tubes
In R. W. Lewis, Editor, Numerical methods in thermal problemsBand8(1), Seite 831-842
In R. W. Lewis, Editor
Herausgeber: Pineridge Press Lmt, Swansea, UK
1993441.
Maten, E. J. W.; Heynderickx, I. E. J.; Potze, W.; Rusch, J. J.; Schilders, W. H. A.
Simulation of steady non-isothermal flow of liquid crystalline polymers
In K. Morgan and E. Onate and J. Periaux and J. Peraire and O. C. Zienkiewicz, Editor, Finite elements in fluids, New trends and applicationsBand1, Seite 572-581
In K. Morgan and E. Onate and J. Periaux and J. Peraire and O. C. Zienkiewicz, Editor
Herausgeber: Centro Int. de Metodos Num. en Ing. (CIMNE), Barcelona and Pineridge Press Lmt, Swansea, UK
1993440.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH\(_{3}\) and N\(_{2}\)O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993439.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH\(_{3}\) and N\(_{2}\)O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993438.
Becker, Karl Heinz; Engelhardt, B.; Geiger, Harald; Kurtenbach, Ralf; Wiesen, Peter
Temperature dependence of the reactions of CH radicals with NO, NH3 and N2O in the range 200-1300 K
Chemical Physics Letters, 210 (1-3) :135-140
1993437.
Shestakov, Oleg; Fink, Ewald H.
The a\(^{3}\)\(\Sigma\)\(^{+}\)(a\(_{1}\)1) - X\(^{1}\)\(\Sigma\)\(^{+}\)(X0\(^{+}\)) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993436.
Shestakov, Oleg; Fink, Ewald H.
The a\(^{3}\)\(\Sigma\)\(^{+}\)(a\(_{1}\)1) - X\(^{1}\)\(\Sigma\)\(^{+}\)(X0\(^{+}\)) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993435.
Shestakov, Oleg; Fink, Ewald H.
The a3Σ+(a11) - X1Σ+(X0+) transition of BiN
Chemical Physics Letters, 211 (4-5) :473-477
1993434.
J{\o}rgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H\(_{2}\)O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press433.
J{\o}rgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H\(_{2}\)O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press432.
Jørgensen, Uffe G.; Jensen, Per
The Dipole Moment Surface and the Vibrational Transition Moments of H2O
Journal of Molecular Spectroscopy, 161 (1) :219-242
1993
Herausgeber: Academic Press431.
Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H\(_{2}\)Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press430.
Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H\(_{2}\)Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press429.
Kozin, Igor N.; Klee, Stefan; Jensen, Per; Polyansky, Oleg L.; Pavlichenkov, I. M.
The Far-Infrared Fourier Transform Spectrum of H2Se
Journal of Molecular Spectroscopy, 158 (2) :409-422
1993
Herausgeber: Academic Press428.
Biggs, P.; Canosa-Mas, Carlos E.; Monks, P. S.; Wayne, Richard P.; Benter, Thorsten; Schindler, Ralph N.
The kinetics of the nitrate radical self-reaction
International Journal of Chemical Kinetics, 25 (10) :805-817
1993427.
Biggs, P.; Canosa-Mas, Carlos E.; Monks, P. S.; Wayne, Richard P.; Benter, Thorsten; Schindler, Ralph N.
The kinetics of the nitrate radical self-reaction
International Journal of Chemical Kinetics, 25 (10) :805-817
1993426.
Biggs, P.; Canosa-Mas, Carlos E.; Monks, P. S.; Wayne, Richard P.; Benter, Thorsten; Schindler, Ralph N.
The kinetics of the nitrate radical self-reaction
International Journal of Chemical Kinetics, 25 (10) :805-817
1993425.
Jensen, Per; Kozin, Igor N.
The Potential Energy Surface for the Electronic Ground State of H\(_{2}\)Se Derived from Experiment
Journal of Molecular Spectroscopy, 160 (1) :39-57
1993
Herausgeber: Academic Press424.
Jensen, Per; Kozin, Igor N.
The Potential Energy Surface for the Electronic Ground State of H\(_{2}\)Se Derived from Experiment
Journal of Molecular Spectroscopy, 160 (1) :39-57
1993
Herausgeber: Academic Press423.
Jensen, Per; Kozin, Igor N.
The Potential Energy Surface for the Electronic Ground State of H2Se Derived from Experiment
Journal of Molecular Spectroscopy, 160 (1) :39-57
1993
Herausgeber: Academic Press422.
Chong, Delano P.; Papousek, Dusan; Chen, Yit-Tsong; Jensen, Per
Theoretical vibrational and rotational energies and intensities of the HNSi and DNSi molecules
The Journal of Chemical Physics, 98 (2) :1352-1357
1993421.
Chong, Delano P.; Papousek, Dusan; Chen, Yit-Tsong; Jensen, Per
Theoretical vibrational and rotational energies and intensities of the HNSi and DNSi molecules
The Journal of Chemical Physics, 98 (2) :1352-1357
1993420.
Chong, Delano P.; Papousek, Dusan; Chen, Yit-Tsong; Jensen, Per
Theoretical vibrational and rotational energies and intensities of the HNSi and DNSi molecules
The Journal of Chemical Physics, 98 (2) :1352-1357
1993419.
Günther, Michael; Rentrop, R
TUM
1993