Semiconductor
Semiconductor devices are solid state bodies, whose electrical conductivity strongly depends on the temperature and other internal properties like the so-called doping. Depending on the temperature or other internal settigns, they can be regarded as insulator or conductor. (Physically speaken: Semiconductor materials have a band gap between.. and .. electron Volt)
This property makes them extremely useful in electronics, since this property can be easily employed to use them as switches. On nowadays computerchips and prozessors, millions of semiconductor devices (especially transistors) are included in an electronic circuit. In order to use common circuit simulation tools to simualte circuits containing those devices, semiconductor devices are often reflected by compact models - subcircuits of basic elements like resistors, capacitors, inductors and current/voltage sources. Those compact models shoul rebuild the input/output behaviour of the semiconductor device.
Ongoing miniaturization and the step from miro- to nanotechnology, however, leads to more powerful prozessors and chips, since higher packing density can be achieved. On the other hand, this higher packing density and miniaturization of the devices makes parasitic effects like heating predominant. Incorporation of those effects into compact models results in large compact models to describe a single semiconductor device. This makes it desireable to include more exact distributed device models - device models based on partial differential equations - into circuit simulation.
Moreover, smaller devices are driven by smaller signals, what makes them more energy efficient. On the other hand this results in a larger noise/signal ratio, what makes inclusion of non-deterministic effects into device models interesting. All in all, this leads to the following recent question in semiconductor/circuit modelling and simulation:
- Thermal effects in semiconductor devices
- Noise in semiconductor devices (SDEs)
- Quantum Effects in semiconductor devices
- Electro-thermal coupling of optoelectronic semiconductor devices with electric circuits
- Efficient Co-Simulation of circuit/semiconductor problems (Dynamic Iteration schemes)
Former and ongoing projects
Cooperations
- Vittorio Romano, Università degli studi di Catania, Italy
- Giuseppe Ali, Universitá della Calabria, Italy
- Ansgar Jüngel, TU Vienna, Austria
- Pina Milisic, University of Zagreb, Croatia
Open subjects for theses
- Master Thesis: Two-dimensional thermal-electric simulation of semiconductor MOSFET-devices (M.Brunk)
Publications
- 1981
30.
Barnes, Ian; Bastian, V.; Becker, Karl Heinz; Fink, Ewald H.; Zabel, Friedhelm
Rate constant of the reaction of OH with HO2NO2
Chemical Physics Letters, 83 (3) :459-464
1981- 1980
29.
Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B\(_{0}\) constant of C\(_{6}\)H\(_{6}\)
Journal of Molecular Spectroscopy, 83 (1) :161-174
198028.
Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B0 constant of C6H6
Journal of Molecular Spectroscopy, 83 (1) :161-174
198027.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Emissions of SeO, SeS, and Se\(_{2}\) in the near infrared
Chemical Physics Letters, 73 (2) :297-303
198026.
Kauppinen, Jyrki; Jensen, Per; Brodersen, Svend
Determination of the B\(_{0}\) constant of C\(_{6}\)H\(_{6}\)
Journal of Molecular Spectroscopy, 83 (1) :161-174
198025.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, Jürgen; Zabel, Friedhelm
b1Σ+ → X3Σ- Emissions of SeO, SeS, and Se2 in the near infrared
Chemical Physics Letters, 73 (2) :297-303
198024.
Winter, R.; Barnes, Ian; Fink, Ewald H.; Wildt, J{ü}rgen; Zabel, Friedhelm
b\(^{1}\)\(\Sigma\)\(^{+}\) → X\(^{3}\)\(\Sigma\)\(^{-}\) Emissions of SeO, SeS, and Se\(_{2}\) in the near infrared
Chemical Physics Letters, 73 (2) :297-303
1980- 1979
23.
Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO\(_{2}\)/DO\(_{2}\) radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
197922.
Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO\(_{2}\)/DO\(_{2}\) radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
197921.
Glaschick-Schimpf, I.; Leiss, A.; Monkhouse, Penelope B.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
A kinetic study of the reactions of HO2/DO2 radicals with nitric oxide using near-infrared chemiluminescence detection
Chemical Physics Letters, 67 (2-3) :318-323
197920.
Tausch, Michael W.; C. Ha{ßs}, E.; J. Plath, P.
Beschreibung von Valenzisomerisierungen durch Strukturvariation auf vollständigen Graphen
Informal Communications in Mathematical Chemistry (MatCh), 7 :289
197919.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Chemiluminescence of SO(\(^{1}\)\(\Delta\)\(_{g}\),\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\)) sensitized by O\(_{2}\)(\(^{1}\)\(\Delta\)\(_{g}\))
Chemical Physics Letters, 67 (2-3) :310-313
197918.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Chemiluminescence of SO(\(^{1}\)\(\Delta\)\(_{g}\),\(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\)) sensitized by O\(_{2}\)(\(^{1}\)\(\Delta\)\(_{g}\))
Chemical Physics Letters, 67 (2-3) :310-313
197917.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Chemiluminescence of SO(1Δg,1Σg+) sensitized by O2(1Δg)
Chemical Physics Letters, 67 (2-3) :310-313
197916.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Near-infrared emissions from the \(^{1}\)\(\Delta\)\(_{g}\) and \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) states of S\(_{2}\)
Chemical Physics Letters, 67 (2-3) :314-317
197915.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Near-infrared emissions from the 1Δg and 1Σg+ states of S2
Chemical Physics Letters, 67 (2-3) :314-317
197914.
Tausch, Michael W.
Vorschlag für den Aufbau und die Bewertung einer Klausur zum Kurs ''Bindung und Struktur''
Praxis der Naturwissenschaften (Chemie), 28 :304
197913.
Barnes, Ian; Becker, Karl Heinz; Fink, Ewald H.
Near-infrared emissions from the \(^{1}\)\(\Delta\)\(_{g}\) and \(^{1}\)\(\Sigma\)\(_{g}\)\(^{+}\) states of S\(_{2}\)
Chemical Physics Letters, 67 (2-3) :314-317
1979- 1978
12.
Tausch, Michael W.; C. Hass, E.; J. Plath, P.
Eine graphentheoretische Bezugsstruktur für die Eigenwertsumme konjugierter Kohlenwasserstoffe
Bremer Briefe zur Chemie, 2 (30)
197811.
Leiss, A.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
Revised quenching rate constants for metastable oxygen molecules O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))
Journal of Photochemistry, 8 (2) :211-214
197810.
Leiss, A.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
Revised quenching rate constants for metastable oxygen molecules O\(_{2}\)(a\(^{1}\)\(\Delta\)\(_{g}\))
Journal of Photochemistry, 8 (2) :211-214
19789.
Leiss, A.; Schurath, Ulrich; Becker, Karl Heinz; Fink, Ewald H.
Revised quenching rate constants for metastable oxygen molecules O2(a1Δg)
Journal of Photochemistry, 8 (2) :211-214
1978- 1977
8.
[german] Tausch, Michael W.; Elian, Mihai; Bucur, Aurora; Cior{{\^a}}nescu, Ecaterina
Über das photochemische Verhalten von zwei Tribenzo-(CH)12-Valenzisomeren
Chemische Berichte, 110 (5) :1744-1747
1977
Herausgeber: Wiley- 1974
7.
Mihail, R.; Tausch, Michael W.
Homogene Reaktionen in einem Rohrreaktor mit nicht-Newtonscher Strömung
The Chemical Engineering Journal, 7 (1) :53--60
1974
Herausgeber: Elsevier {BV}6.
Becker, Karl Heinz; Fink, Ewald H.; Langen, P.; Schurath, Ulrich
Near infrared emission bands of the HO\(_{2}\) radical
The Journal of Chemical Physics, 60 (11) :4623-4625
1974